Allicdata Part #: | BLF8G24LS-200PNU-ND |
Manufacturer Part#: |
BLF8G24LS-200PNU |
Price: | $ 61.87 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 65V 17.2DB SOT539B |
More Detail: | RF Mosfet LDMOS (Dual), Common Source 28V 1.74A 2.... |
DataSheet: | BLF8G24LS-200PNU Datasheet/PDF |
Quantity: | 1000 |
60 +: | $ 56.24590 |
Series: | -- |
Packaging: | Tube |
Part Status: | Last Time Buy |
Transistor Type: | LDMOS (Dual), Common Source |
Frequency: | 2.3GHz ~ 2.4GHz |
Gain: | 17.2dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.74A |
Power - Output: | 60W |
Voltage - Rated: | 65V |
Package / Case: | SOT539B |
Supplier Device Package: | SOT539B |
Base Part Number: | BLF8G24 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BLF8G24LS-200PNU is a SOT272 (U-FL) package in the IF/L-Band FET family. It offers excellent performance in wireless applications and has advantages over other FETs for several different reasons. This article will discuss the application field and working principle of the BLF8G24LS-200PNU.
Application Field:
The BLF8G24LS-200PNU is suitable for use in many different kinds of wireless applications. It can be used to make power amplifiers, switch amplifiers, and radio frequency (RF) front-end transceivers. The BLF8G24LS-200PNU is a low-noise FET with a gain of 24 dB at 2.4 GHz and is ideal for use in high-sensitivity RF systems. It has a low maximum power dissipation and is therefore reliable in operating conditions. It is also extremely stable and has a wide range of temperature ranges and linear current gains. The BLF8G24LS-200PNU is ideal for wireless applications that require high performance and reliability.
Working Principle:
The BLF8G24LS-200PNU is a field-effect transistor (FET) that works by controlling the current flow between its source and drain leads. The amount of current that can pass through the channel is determined by the voltage applied to the gate. The gate voltage creates an electric field that modulates the conductivity of the channel and therefore controls the current that passes through it. This feature makes the FET an ideal switch in telecommunications, allowing for faster switching speeds and better performance. In addition, the FET is capable of working with very small signals, making it ideal for use in RF circuits.
The BLF8G24LS-200PNU also offers high performance against power dissipation. Its wide linear current gain and temperature range allows for reliable operation. This FET is designed to offer superior performance in wireless applications, offering high efficiency and low power consumption. The BLF8G24LS-200PNU can also provide a high output signal and low signal distortion, making it highly suitable for high-performance and low-noise applications.
Conclusion:
In summary, the BLF8G24LS-200PNU is an excellent choice for a wide range of wireless applications. It offers excellent performance in high-sensitivity RF systems and low power dissipation. It has a wide range of temperature ranges and linear current gain offering superior performance and reliability. The BLF8G24LS-200PNU is also suitable for use in RF circuits, offering high performance without compromising on signal distortion or output signal levels. The BLF8G24LS-200PNU is an excellent choice for wireless applications requiring high performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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