BLF8G27LS-140,112 Allicdata Electronics
Allicdata Part #:

1603-1143-ND

Manufacturer Part#:

BLF8G27LS-140,112

Price: $ 53.33
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 65V 17.4DB SOT502B
More Detail: RF Mosfet LDMOS 32V 1.3A 2.62GHz ~ 2.69GHz 17.4dB ...
DataSheet: BLF8G27LS-140,112 datasheetBLF8G27LS-140,112 Datasheet/PDF
Quantity: 40
1 +: $ 48.48480
10 +: $ 46.06120
100 +: $ 41.51550
Stock 40Can Ship Immediately
$ 53.33
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: LDMOS
Frequency: 2.62GHz ~ 2.69GHz
Gain: 17.4dB
Voltage - Test: 32V
Current Rating: --
Noise Figure: --
Current - Test: 1.3A
Power - Output: 45W
Voltage - Rated: 65V
Package / Case: SOT-502B
Supplier Device Package: SOT502B
Base Part Number: BLF8G27
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors - FETs, MOSFETs - RF are highly complex and advanced devices used in many industrial and electrical applications. They have been around for many years, but recent advancements have made them even more important in today’s environment. One such device is the BLF8G27LS-140,112, which is a high-frequency, low-power MOSFET suitable for a variety of applications.

This device consists of an N-channel MOSFET with a single source and a drain. It has an output power of 27 Watts, an input range of 0.006 - 4 GHz, and a maximum drain-source voltage of 20V. It also has a maximum current rating of 250mA.

The BLF8G27LS-140,112 is a very efficient device and is suitable for a wide range of applications. It can be used for high-speed switching applications in RF communications systems, automotive electronics, and a variety of other applications.

The MOSFET is a type of transistor that is often used for high-speed switching and amplification applications. This is due to the fact that MOSFETs have the capability to be switched on or off very quickly, allowing for fast and efficient electrical operations. Additionally, MOSFETs are highly efficient and consume very little power.

The BLF8G27LS-140,112 is an ideal device for high-frequency and high-power applications. It has a very low gate capacitance, which enables it to be switched on or off quickly. Additionally, its low power consumption makes it very energy-efficient, which is important in today’s energy-sensitive applications. Furthermore, its high voltage rating makes it suitable for a variety of applications and its high frequency rating makes it suitable for RF communications systems.

The working principle of the BLF8G27LS-140,112 is relatively simple. The gate of the transistor is connected to the input signal, which is then passed through the MOSFET to the output. When the input voltage is higher than the threshold voltage, the latest flows from the source to the drain. Thus, when the input voltage is higher than the threshold voltage, the output is essentially on and when the input voltage is lower than the threshold voltage, the output is essentially off.

The BLF8G27LS-140,112 is a highly efficient, low power MOSFET suitable for a wide range of applications. It has a high voltage rating, a low gate capacitance, and a high frequency rating making it suitable for RF communications systems, automotive electronics, and a variety of other applications. Its working principle is also relatively simple, allowing it to be used in many different applications with great ease. All these features make the BLF8G27LS-140,112 an extremely valuable component in many industrial and electrical applications.

The specific data is subject to PDF, and the above content is for reference

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