Allicdata Part #: | 1603-1134-ND |
Manufacturer Part#: |
BLF898U |
Price: | $ 216.71 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF MOSFET LDMOS 50V SOT539A |
More Detail: | RF Mosfet LDMOS 50V 900mA 470MHz ~ 800MHz 18dB 900... |
DataSheet: | BLF898U Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 197.01400 |
10 +: | $ 188.69100 |
Specifications
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 470MHz ~ 800MHz |
Gain: | 18dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 900mA |
Power - Output: | 900W |
Voltage - Rated: | 120V |
Package / Case: | SOT539A |
Supplier Device Package: | SOT539A |
Description
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The BLF898U is an advanced field-effect transistor (FET) used in a variety of high-frequency radio-frequency (RF) applications. It is particularly well-suited for use in RF amplifiers and is often found in radios, cellular phones, satellite communications equipment, and other military and aerospace devices. This article will provide an overview of the BLF898U application field and working principle.The basic function of a FET is to control and direct an electrical current, depending on the amount of voltage or current applied to it. FETs are commonly used as switching devices and are among the most popular of all solid-state devices. As such, they are used in a wide variety of RF applications.The BLF898U FET, specifically, is a N-channel, enhancement mode field effect transistor designed for use in RF amplifier and RF switch applications. It is manufactured with Low Noise Amplifier (LNA) and High-Linearity (HL) technologies, making it an ideal choice for use in high frequency applications. The BLF898U features an optimized package that allows for low power loss while still delivering excellent performance. The device has a low noise figure (NF), high gain, and good linearity. Additionally, it has good power gain, low input-referred second harmonics, and high input Return Loss (RL). The device is also capable of operating over a wide temperature range and is available in a variety of package options.When applied to an electronic circuit, the BLF898U FET acts as an amplifier. It receives an input signal, boosts it, and then sends it on to the next stage. It works by creating a voltage-dependent capacitance between the two sides of the device. When an electrical signal is applied to the device, it creates an electric field between them. This field then affects the electrical current, allowing it to be directed and amplified accordingly.The BLF898U is also used in a variety of high-frequency radio-frequency applications. For example, it can be used in signal antennas and other antennas that require the transfer of signals from one place to another. Additionally, it can be used in receivers and monitors for broadcasting, radar, and satellite communications. The device is also used in RF transmitters and receivers for communication systems.When it comes to RF transmission and reception, the BLF898U is an excellent choice. It is designed to provide high gain and excellent linearity, while also reducing noise. Additionally, it can handle a wide temperature range and is available in a variety of packages. This makes the BLF898U an ideal device for a range of RF applications.In conclusion, the BLF898U is an advanced field effect transistor that is well-suited for use in a variety of high-frequency radio-frequency applications. It is manufactured with low noise and high-linearity technologies and is capable of operating over a wide temperature range. It is an ideal choice for use in signal antennas, receivers, monitors, and other RF applications. With its excellent performance and reliable operation, the BLF898U is sure to be a valuable tool for engineers and technicians in the RF industry.The specific data is subject to PDF, and the above content is for reference
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