BLF8G20LS-160VJ

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A BLF8G20LS-160VJ is an enhancement mode Gallium Nitride based high electron mobility field-effect-transistor (GaN HEMT) with an internal Pdiss per mm(IHP) rating of 320W, and an operating frequency range between 10-4000MHz. Generally speaking, these devices demonstrate a strong performance in both amplification and switching applications, where low noise and low SWR is key. Thanks to its characteristics, the BLF8G20LS-160VJ is applied in very wide array of radio communication and consumer electronics, including in DC-DC converters, cable TV, antennas, satellites, microwave radio and mobile phones, among others.

A FET is generally a voltage-controlled device, and the BLF8G20LS-160VJ is no exception. Operating as an enhancement mode type of device, the gate bias is set directly by the source voltage, allowing for the transistor to switch on with a very low threshold value. The drain to source current, IDS, is, in turn, proportional to the gate voltage minus the threshold voltage. When the drain voltage is high enough and the gate voltage is above the threshold value, the device will be driven into saturation, causing the I DS to be limited mostly by the current drain limit.

The high input impedance offered by the FET is another key aspect to consider when using a BLF8G20LS-160VJ. Since the impedance is (normally) extremely high, the device presents no loading on the input circuit, meaning that the input signal will not be affected by the presence of the device in the circuit. The BLF8G20LS-160VJ transistors can be used in high power, high frequency applications as low as 10 MHz up to 4000 MHz – or 4 GHz as its upper limit – with an excellent linearity even in these high frequencies.

In amplifying applications, a BLF8G20LS-160VJ can be used both in pushing and pulling mode, which makes this particular FET suitable for a wide selection of different circuits. Pushing will provide a high gain and good linearity, while pulling allows for a higher output compression. The combination of these two operating modes in a single device allows for improved efficiency and higher power output.

Finally, a BLF8G20LS-160VJ can be used to drive passive loads, or even in active switches, such as in a linear power amplifier. Thanks to its high input impedance, the device can control very large currents with a limited gate bias circuitry. For active switching applications, the transmit/receive switching time of a BLF8G20LS-160VJ can be as fast as 20 nanoseconds, making it possible to use this FET in a wide range of high speed, wide dynamic range applications.

In conclusion, the BLF8G20LS-160VJ is a high performance, high electron mobility field-effect transistor suitable for amplification and switching applications. Thanks to its characteristics, these devices present great potential in radio communication, consumer electronics and active/passive switch applications, showing excellent performance in any of these applications regardless of the operating frequency.

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