BLF871S,112

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The BLF871S112 is a part of a series of RF power LDMOSFETs manufactured by NXP. These FETs offer high gain-bandwidth and high output power to satisfy the requirements of high performance communications and radar systems.

The BLF871S112 is designed to operate over a frequency range of 0.7 GHz – 6 GHz, making it suitable for use in a variety of radio frequency applications such as Wi-Fi, cellular, digital radio, satellite communications and automotive collision avoidance systems.

As a wideband high power LDMOSFET, the BLF871S112 is designed to deliver higher levels of output power than standard LDMOSFETs. It has a power gain of 18 dB @ 2.14GHz with a power output of 27 dBm, making it suitable for use in high power, wideband applications.

The device is supplied in a plastic packaged dual inline footprint and operates from a single positive supply voltage, making it easy to use in a variety of applications. It is a matched device and is therefore suitable for use in a variety of systems requiring a more optimal performance, such as small cell base stations, point to point microwave systems, and distributed antenna systems.

The BLF871S112 is an enhancement mode device and is intended for use in applications where high gain and power are required. It has a low threshold voltage, making it suitable for high voltage operation. The device also offers a low gate resistance and low on-state drain-source resistance, allowing it to operate at high frequencies.

The operating principle of the BLF871S112 is based on a metal oxide semiconductor field effect transistor (MOSFET). The device is a three-terminal device, where the source is connected to the gate and the drain is connected to the substrate. The source terminal is connected to the source line, whereas the drain terminal is connected to the load line. The gate is connected to the control line. When a voltage is applied to the control line, it controls the current that flows between the source and the drain and hence the gain. This principle is also referred to as voltage control current flow.

The BLF871S112 is a high performance RF power LDMOSFET designed to deliver high power, high gain-bandwidth and low noise. It is suitable for use in a variety of radio frequency applications, such as Wi-Fi, cellular, digital radio, satellite communications and automotive collision avoidance systems. It is a matched device, and is supplied in a plastic packaged dual inline footprint allowing for easy use. Its low threshold voltage also makes it suitable for high voltage operation. The device operates on the principle of voltage control current flow, making it a popular device for high frequency applications.

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