BLF8G22LS-240J Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	2.11GHz ~ 2.17GHz
Gain:	19dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	2A
Power - Output:	55W
Voltage - Rated:	65V
Package / Case:	SOT-502B
Supplier Device Package:	SOT502B
Base Part Number:	BLF8G22

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BLF8G22LS-240J Application Field and Working Principle

Introduction

BLF8G22LS-240J is an N-channel enhancement type, discrete metal-oxide-semiconductor field-effect transistor (MOSFET). This device is designed to be used in RF power applications and can deliver high current densities with high efficiency. It is the ideal choice for high power RF amplifier applications in mobile, satellite, UHF and VHF radio systems.

Key Features

 N-channel MOSFET Enhancement-type device High current densities High efficiency NPN substrate configuration

Application

BLF8G22LS-240J is a high-power MOSFET designed for use in UHF and VHF radio systems. This device is designed to perform in high power RF amplifier applications such as radios, mobile phones, satellites, radar and other communication systems. In particular, this device is ideal for use in power amplifiers, switches, and RF mixers.

Working Principle

N-channel, enhancement-type MOSFETs operate by controlling the electric field between the source and drain contacts. This is accomplished by changing the width of the channel between the source and drain contacts, which is controlled by the bias voltage applied to the gate terminal.When no voltage is applied to the gate terminal, the MOSFET is said to be in the off state. The width of the channel between the source and drain contacts is very small, and almost no current is able to flow. However, when a voltage is applied to the gate terminal, the width of the channel between the source and drain contacts increases, and current is allowed to flow from the source to the drain. The amount of current that can flow depends on the voltage applied to the gate terminal, which effectively controls the width of the channel between the source and drain contacts.

Conclusion

The BLF8G22LS-240J is an N-channel, enhancement type MOSFET designed for use in high-power RF applications. This device is capable of delivering high current densities with high efficiency and is ideal for use in radios, mobile phones, satellites, radar and other communication systems. Its working principle involves controlling the electric field between the source and drain contacts by changing the width of the channel between the source and drain contacts, which is controlled by the bias voltage applied to the gate terminal.

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