BLF8G09LS-270WU Allicdata Electronics
Allicdata Part #:

BLF8G09LS-270WU-ND

Manufacturer Part#:

BLF8G09LS-270WU

Price: $ 53.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 65V 20DB SOT1244B
More Detail: RF Mosfet LDMOS 28V 2A 718.5MHz ~ 725.5MHz 20dB 67...
DataSheet: BLF8G09LS-270WU datasheetBLF8G09LS-270WU Datasheet/PDF
Quantity: 1000
60 +: $ 48.22430
Stock 1000Can Ship Immediately
$ 53.05
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: LDMOS
Frequency: 718.5MHz ~ 725.5MHz
Gain: 20dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 2A
Power - Output: 67W
Voltage - Rated: 65V
Package / Case: SOT-1244B
Supplier Device Package: CDFM6
Base Part Number: BLF8G09
Description

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The BLF8G09LS-270WU is a type of Field-effect Transistor (FET). FETs are a type of transistor that relies on a gate voltage to control the current flow between the source and the drain through the channel. FETs are known for their high input impedance, which makes them ideal for a wide range of applications. In particular, the BLF8G09LS-270WU is classified as an RF (radio-frequency) FET and is used in applications that require a high switching frequency, such as antennas, radar systems and medical imaging equipment.

The BLF8G09LS-270WU is specifically designed for radio-frequency applications and is able to operate over a wide frequency range, from 10 MHz up to 6 GHz. The FET is also capable of handling high power levels, with a maximum output power of 270 W. The FET also has a low noise figure, which is important for receiving applications, and a low operating current, which makes it an ideal power-efficient option.

The working principle of a FET is based on the phenomenon of electrostatic induction. The FET consists of a gate, a source, and a drain. The gate is connected to a voltage or current source, and when a voltage is applied to the gate, an electric field is generated which modulates the conductivity of the channel between the source and the drain. This modulation of the channel conductivity allows current to flow between the source and the drain, thereby controlling the flow of current.

In the case of the BLF8G09LS-270WU, the gate voltage is used to control the current flow between the source and drain, which enables the FET to perform as an amplifier, switch, or as an oscillator in RF applications. The FET is also able to operate at different frequencies and power levels, enabling it to be used in a wide range of applications ranging from cellular networks and satellite communications to radar systems and medical imaging equipment.

The BLF8G09LS-270WU is a versatile and reliable FET for use in high-frequency applications, offering a wide range of features including high input impedance, low operating current and a high power output. Thanks to its wide frequency range, low noise figure, and high power capability, the BLF8G09LS-270WU is well suited to a wide range of RF applications.

The specific data is subject to PDF, and the above content is for reference

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