Allicdata Part #: | 568-7554-ND |
Manufacturer Part#: |
BLF881,112 |
Price: | $ 72.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 104V 21DB SOT467C |
More Detail: | RF Mosfet LDMOS 50V 500mA 860MHz 21dB 140W SOT467C |
DataSheet: | BLF881,112 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 65.55780 |
10 +: | $ 62.17530 |
100 +: | $ 56.25410 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 860MHz |
Gain: | 21dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 500mA |
Power - Output: | 140W |
Voltage - Rated: | 104V |
Package / Case: | SOT467C |
Supplier Device Package: | SOT467C |
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The BLF881,112 is a family of enhancement-mode field-effect transistors built on gallium arsenide technology used in RF applications. It has a number of features and benefits which make it ideally suited for use in radios and other radio frequency applications. These features make this device a reliable and cost-effective alternative to traditional silicon-based technology.
The BLF881,112 is an enhancement-mode junction field-effect transistor (JFET). It is a part of the BLF881,112 transistor family developed by Semisomatic specifically for RF applications. The primary difference between a JFET and a regular MOSFET is that JFETs are voltage-controlled devices, with the gate being used to control the current flow through the device. In contrast, traditional MOSFETs are current-controlled devices, with the gate controlling how much current flows through the device.
The BLF881,112 is a low-noise device, which makes it an ideal choice for radio applications. It features an low junction capacitance, fast switching time, high current gain, and good thermal stability. This makes it ideal for use in radios and other radio frequency applications. It also offers superior performance in high frequency applications, such as cellular phones and other wireless devices.
The BLF881,112 can also be used in low power applications, such as audio amplifiers. This is due to its low junction capacitance and its ability to deliver low power levels without any power dissipation. This makes it an ideal choice for use in applications such as headphone amplifiers and other audio electronics.
The BLF881,112 has a wide range of voltage and current ratings, which makes it well suited for use in a variety of applications. Its wide bias-range allows it to work with a variety of different types of input stages, allowing it to tolerate a wide range of input voltages. The wide voltage range also allows it to operate at a wide range of frequencies, with a maximum frequency range of up to 200MHz.
The BLF881,112 is also tolerant of temperature variations and is stable under a wide range of environmental conditions. This means that the device will still remain reliable even when subjected to extreme temperatures and will not suffer from any thermal issues.
The BLF881,112 is an ideal choice for use in a variety of radio frequency applications. Its wide range of features make it ideal for use in radio applications, where its low-noise performance, low power levels, and good thermal stability make it an ideal choice. Additionally, its wide range of voltage, current, and frequency ratings make it suitable for use in a variety of other applications as well. This makes it an all-around great choice for any type of RF application.
The specific data is subject to PDF, and the above content is for reference
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BLF8G22LS-160BV:11 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
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BLF884PS,112 | Ampleon USA ... | 93.18 $ | 45 | RF FET LDMOS 104V 21DB SO... |
BLF8G22LS-270J | Ampleon USA ... | 51.72 $ | 100 | RF FET LDMOS 65V 17.7DB S... |
BLF882SU | Ampleon USA ... | 86.41 $ | 50 | RF FET LDMOS 104V 20.6DB ... |
BLF8G20LS-400PGVJ | Ampleon USA ... | 51.72 $ | 100 | RF FET LDMOS 65V 19DB SOT... |
BLF8G22LS-270GVJ | Ampleon USA ... | 51.72 $ | 100 | RF FET LDMOS 65V 17.3DB S... |
BLF8G20LS-230VU | Ampleon USA ... | 53.33 $ | 107 | RF FET LDMOS 65V 18DB SOT... |
BLF8G20LS-400PVU | Ampleon USA ... | 60.28 $ | 105 | RF FET LDMOS 65V 19DB SOT... |
BLF8G10LS-300PJ | Ampleon USA ... | 77.42 $ | 100 | RF FET LDMOS 65V 20.5DB S... |
BLF881S,112 | Ampleon USA ... | 72.11 $ | 52 | RF FET LDMOS 104V 21DB SO... |
BLF884P,112 | Ampleon USA ... | 93.18 $ | 147 | RF FET LDMOS 104V 21DB SO... |
BLF888DSU | Ampleon USA ... | 165.33 $ | 60 | RF FET LDMOS 104V 21DB SO... |
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BLF8G20LS-400PGVQ | Ampleon USA ... | 60.28 $ | 60 | RF FET LDMOS 65V 19DB SOT... |
BLF8G09LS-400PWU | Ampleon USA ... | 60.28 $ | 60 | RF FET LDMOS 65V 20.6DB S... |
BLF8G09LS-400PGWQ | Ampleon USA ... | 60.28 $ | 53 | RF FET LDMOS 65V 20.6DB S... |
BLF8G10LS-300PU | Ampleon USA ... | 87.47 $ | 60 | RF FET LDMOS 65V 20.5DB S... |
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BLF8G09LS-400PWJ | Ampleon USA ... | 51.72 $ | 1000 | RF FET LDMOS 65V 20.6DB S... |
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