Allicdata Part #: | 568-5102-5-ND |
Manufacturer Part#: |
BLF888,112 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 104V 19DB SOT979A |
More Detail: | RF Mosfet LDMOS (Dual), Common Source 50V 1.3A 860... |
DataSheet: | BLF888,112 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | LDMOS (Dual), Common Source |
Frequency: | 860MHz |
Gain: | 19dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.3A |
Power - Output: | 250W |
Voltage - Rated: | 104V |
Package / Case: | SOT-979A |
Supplier Device Package: | CDFM2 |
Base Part Number: | BLF888 |
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BLF888,112 are metal-oxide-semiconductor field-effect transistors (MOSFETs) which contribute to a small group of transistors used for radio frequency (RF) applications. MOSFETs are typically utilized in wireless communication systems, as they are highly sensitive and economical than other transistor types such as bipolar junction transistors (BJTs).
The BLF888,112 MOSFETs are common in RF receivers, transmitters, and switching circuits, due to its high input impedance, yet low noise performance. Their design enables the transistors to optimally switch and modulate signals with few distortions and has a low on-state resistance, high linearity and high current capability.
BLF888,112 are N-channel enhancement mode MOSFETs, with a low gate-source threshold voltage, therefore requiring a low gate drive voltage. They consist of an array of ultra thin geometries, which feature a high transconductance between drain and source voltage and an increase of input impedance in comparison to other MOSFET models.
The transistors apply a type ‘L-shaped’ or ‘lever arm’ construction of metal gate layer, which helps to reduce the gate, which shortens the switching time and helps to improve the harmonics of a signal when transmitting, compared to other MOSFETs.
The BLF888,112 does not endure any gate current, as this would reduce the effective switch-on time, as the gate capacitance must be charged and discharged, which can affect the distortion levels and increase noise in the circuit.
Due to the construction of MOSFETs, having slightly negative gate-source voltage bias, this limits the implementation of a DBV voltage, which restricts the operation of the BLF888,112’s to those below 20V. BLF888,112’s are designed in TO-252 and TO-269 packages, to be used in high-frequency or high-power circuits, while providing additional protection to the gate pin.
Overall, BLF888,112’s make a great option when it comes to RF applications, as they have a wide operating temperature range, high gain and are also in compliance with RoHS restrictions.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BLF8G22LS-160BV:11 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
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BLF882SU | Ampleon USA ... | 86.41 $ | 50 | RF FET LDMOS 104V 20.6DB ... |
BLF8G20LS-400PGVJ | Ampleon USA ... | 51.72 $ | 100 | RF FET LDMOS 65V 19DB SOT... |
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BLF8G20LS-230VU | Ampleon USA ... | 53.33 $ | 107 | RF FET LDMOS 65V 18DB SOT... |
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BLF8G10LS-300PJ | Ampleon USA ... | 77.42 $ | 100 | RF FET LDMOS 65V 20.5DB S... |
BLF881S,112 | Ampleon USA ... | 72.11 $ | 52 | RF FET LDMOS 104V 21DB SO... |
BLF884P,112 | Ampleon USA ... | 93.18 $ | 147 | RF FET LDMOS 104V 21DB SO... |
BLF888DSU | Ampleon USA ... | 165.33 $ | 60 | RF FET LDMOS 104V 21DB SO... |
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BLF8G20LS-400PGVQ | Ampleon USA ... | 60.28 $ | 60 | RF FET LDMOS 65V 19DB SOT... |
BLF8G09LS-400PWU | Ampleon USA ... | 60.28 $ | 60 | RF FET LDMOS 65V 20.6DB S... |
BLF8G09LS-400PGWQ | Ampleon USA ... | 60.28 $ | 53 | RF FET LDMOS 65V 20.6DB S... |
BLF8G10LS-300PU | Ampleon USA ... | 87.47 $ | 60 | RF FET LDMOS 65V 20.5DB S... |
BLF888B,112 | Ampleon USA ... | 157.05 $ | 172 | RF FET LDMOS 104V 21DB SO... |
BLF888BS,112 | Ampleon USA ... | 157.05 $ | 126 | RF MOSFET LDMOS DUAL 50V ... |
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