Allicdata Part #: | 568-12830-ND |
Manufacturer Part#: |
BLF888B,112 |
Price: | $ 157.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 104V 21DB SOT539A |
More Detail: | RF Mosfet LDMOS (Dual), Common Source 50V 1.3A 860... |
DataSheet: | BLF888B,112 Datasheet/PDF |
Quantity: | 172 |
1 +: | $ 142.77100 |
10 +: | $ 136.73700 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | LDMOS (Dual), Common Source |
Frequency: | 860MHz |
Gain: | 21dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.3A |
Power - Output: | 250W |
Voltage - Rated: | 104V |
Package / Case: | SOT539A |
Supplier Device Package: | SOT539A |
Base Part Number: | BLF888 |
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The BLF888B,112 is an RF MOSFET transistor designed for use in a wide range of settings. It is best suited for low-noise and digital signal applications, though it can also be used in Audio and Video applications. The BLF888B,112 is manufactured using advanced ion-implantation technology for superior performance.
The BLF888B,112 is a depletion-mode N-channel MOSFET. It is designed to work with a supply voltage of 9.5V and can handle currents up to 5A. It has an on-resistance of 20 ohms and an off resistance of 1.2K ohms. The drain-source breakdown voltage is approximately 175V. The device also has an excellent noise figure of 1.5dB.
The BLF888B,112 is a perfect choice for radio frequency (RF) applications where very low noise, low distortion, and high dynamic range are required. It is particularly suited for power amplifiers and filters. Its low noise makes it an excellent choice for applications such as mobile phones, walkie-talkies, Bluetooth audio systems, and Wi-Fi networks, where the noise generated by the circuitry needs to be kept to a minimum.
The BLF888B,112 is also a great choice for digital signal processing. It can handle fast switching speeds needed for high precision statistical sampling and other digital signal processing activities. These transistors can be used in combination with each other to create powerful and efficient amplifier, filter, and switch circuits.
The principle of operation of the BLF888B,112 involves the control of an electrical current passing through the device. A gate-source voltage is used to control the current passing from the drain to the source. This voltage is typically applied to the gate at the start of the main flow of current. The device then functions as a variable resistor – the larger the gate-source voltage, the lower the resistance and the higher the current passing through. If the gate-source voltage is decreased, the resistance increases and the current passing through decreases.
In a nutshell, the BLF888B,112 is a versatile RF MOSFET transistor designed for a variety of applications. It has low noise, low distortion, and high dynamic range, making it well suited for RF, Audio, and Video applications. Its fast switching speeds make it an ideal choice for digital signal processing applications. All of these features make the BLF888B,112 a great choice for a variety of projects.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BLF8G22LS-160BV:11 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF888A,112 | Ampleon USA ... | 148.78 $ | 222 | RF FET LDMOS 110V 21DB SO... |
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BLF884PS,112 | Ampleon USA ... | 93.18 $ | 45 | RF FET LDMOS 104V 21DB SO... |
BLF8G22LS-270J | Ampleon USA ... | 51.72 $ | 100 | RF FET LDMOS 65V 17.7DB S... |
BLF882SU | Ampleon USA ... | 86.41 $ | 50 | RF FET LDMOS 104V 20.6DB ... |
BLF8G20LS-400PGVJ | Ampleon USA ... | 51.72 $ | 100 | RF FET LDMOS 65V 19DB SOT... |
BLF8G22LS-270GVJ | Ampleon USA ... | 51.72 $ | 100 | RF FET LDMOS 65V 17.3DB S... |
BLF8G20LS-230VU | Ampleon USA ... | 53.33 $ | 107 | RF FET LDMOS 65V 18DB SOT... |
BLF8G20LS-400PVU | Ampleon USA ... | 60.28 $ | 105 | RF FET LDMOS 65V 19DB SOT... |
BLF8G10LS-300PJ | Ampleon USA ... | 77.42 $ | 100 | RF FET LDMOS 65V 20.5DB S... |
BLF881S,112 | Ampleon USA ... | 72.11 $ | 52 | RF FET LDMOS 104V 21DB SO... |
BLF884P,112 | Ampleon USA ... | 93.18 $ | 147 | RF FET LDMOS 104V 21DB SO... |
BLF888DSU | Ampleon USA ... | 165.33 $ | 60 | RF FET LDMOS 104V 21DB SO... |
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BLF8G22LS-270U | Ampleon USA ... | 60.28 $ | 60 | RF FET LDMOS 65V 17.7DB S... |
BLF8G20LS-400PGVQ | Ampleon USA ... | 60.28 $ | 60 | RF FET LDMOS 65V 19DB SOT... |
BLF8G09LS-400PWU | Ampleon USA ... | 60.28 $ | 60 | RF FET LDMOS 65V 20.6DB S... |
BLF8G09LS-400PGWQ | Ampleon USA ... | 60.28 $ | 53 | RF FET LDMOS 65V 20.6DB S... |
BLF8G10LS-300PU | Ampleon USA ... | 87.47 $ | 60 | RF FET LDMOS 65V 20.5DB S... |
BLF888B,112 | Ampleon USA ... | 157.05 $ | 172 | RF FET LDMOS 104V 21DB SO... |
BLF888BS,112 | Ampleon USA ... | 157.05 $ | 126 | RF MOSFET LDMOS DUAL 50V ... |
BLF888ESU | Ampleon USA ... | 190.11 $ | 44 | RF FET LDMOS 104V 17DB SO... |
BLF898SU | Ampleon USA ... | 216.71 $ | 27 | RF MOSFET LDMOS 50V SOT53... |
BLF8G09LS-400PWJ | Ampleon USA ... | 51.72 $ | 1000 | RF FET LDMOS 65V 20.6DB S... |
BLF8G09LS-400PGWJ | Ampleon USA ... | 51.72 $ | 1000 | RF FET LDMOS 65V 20.6DB S... |
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BLF8G10LS-160,118 | Ampleon USA ... | 42.34 $ | 100 | RF FET LDMOS 65V 19.7DB S... |
BLF8G20LS-230VJ | Ampleon USA ... | 45.67 $ | 100 | RF FET LDMOS 65V 18DB SOT... |
BLF8G24LS-150GVJ | Ampleon USA ... | 45.67 $ | 100 | RF FET LDMOS 65V 19DB SOT... |
BLF8G27LS-100GVQ | Ampleon USA ... | 45.84 $ | 96 | RF FET LDMOS 65V 17DB SOT... |
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