BLF888DSU

Series:	--
Packaging:	Bulk
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	860MHz
Gain:	21dB
Voltage - Test:	50V
Current Rating:	--
Noise Figure:	--
Current - Test:	1.3A
Power - Output:	250W
Voltage - Rated:	104V
Package / Case:	SOT539B
Supplier Device Package:	SOT539B

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:<p>The BLF888DSU is an integrated N-Channel radio frequency (RF) MOSFET device. It is an important component used in radio frequency design and is of particular interest to designers of high power RF and microwave applications such as cellular networks, base stations, Wi-Fi networks and wide-area wireless networks.</p><p>The BLF888DSU is designed with a highly stable and reliable power MOSFET chip. Its structure consists of a high transconductance drain-source resistor, a low resistance source follower, and a low gate-drain capacitance. This combination creates an efficient device with low input power loss, low output power loss, and high power transfer efficiency. Additionally, the BLF888DSU incorporates temperature compensation and a dynamic current stabilization technology for improved performance.</p><p>The BLF888DSU is a versatile RF MOSFET component because of its wide range of applications and increased capability to operate at higher frequencies. This device is used in applications such as wireless local area networks, long-term evolution (LTE) networks, global system for mobile communication (GSM) networks, personal communications services (PCS) networks, satellite communication systems, and optical communication systems.</p><p>The working principle of the BLF888DSU is based on MOSFET technology. It is an electrostatic field effect transistor in which current is controlled by a voltage applied to a gate electrode. An electric field is created at the transistor\'s gate which controls the flow of current between the source and the drain. This makes the MOSFET a switch which can control the current flow in an electrical circuit. The BLF888DSU can be used either as an amplifier or as a switch, depending on the application. When used as an amplifier, the device amplifies the input signal while maintaining low power loss. When used as a switch, the BLF888DSU can switch between two states, on and off, quickly and reliably.</p><p>In conclusion, the BLF888DSU is an important integrated RF MOSFET component with a wide range of (RF) applications. It has a highly stable and reliable power MOSFET chip with a low resistance source follower and low gate-drain capacitance. This combination creates an efficient device with low input power loss and low output power loss, as well as high power transfer efficiency. The working principle of the BLF888DSU is based on MOSFET technology in which current is controlled by an electric field created at the transistor\'s gate. The BLF888DSU is a great choice for those designing or using high power RF and microwave applications.</p>

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