BLF898SU

Series:	--
Packaging:	Tray
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	470MHz ~ 800MHz
Gain:	18dB
Voltage - Test:	50V
Current Rating:	--
Noise Figure:	--
Current - Test:	900mA
Power - Output:	900W
Voltage - Rated:	120V
Package / Case:	SOT539B
Supplier Device Package:	SOT539B

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BLF898SU Application Field and Working PrincipleThe BLF898SU is a field-effect transistor (FET) designed for use in RF systems. It is a gallium nitride (GaN) technology-enabled transistor that is designed to replace outdated bipolar devices in many applications. This type of FET is suitable for a variety of purposes, including both audio and radio frequency (RF) operation.In order to understand its application field, it is important to first understand its operation. The BLF898SU is an N-channel enhancement-mode FET, paired with an external gate voltage. When this voltage is applied to the FET, it increases electron whirlpools at the chip\'s source and drain, thus allowing increased current to flow. As the external voltage is increased, the electron whirlpools increase, and the device conducts higher current.The use of the BLF898SU transcends many RF systems. Its most common applications center around portable transmitters, wireless access points, Bluetooth and Wi-Fi technology, satellite systems, and public safety systems. It is also used in TVs, radios, and other electronics to provide the necessary power for transmitting and receiving signals. The BLF898SU transcends many RF systems because it is an efficient, optimized, and high-performance transistor device. Its GaN technology provides significant advantages over other FET devices, resulting in reduced drawing power, improved energy conversion efficiency, reduced wave distortion, and a higher cutoff frequency range. It can achieve power amplification of up to 24 dB while sustaining operating temperatures of up to -40°C to +125°C; a wide range of frequencies and fast switching speeds make this device suitable for high-speed RF applications. The device supports up to 5 GHz of bandwidth and has a maximum nominal power output capability of 25 W.In addition to the superior performance capabilities and higher efficiency gains of GaN-based FETs, the BLF898SU also offers cost-effective features. It features a compact housing, improved noise performance, and decreased production costs. The internal electrical insulation and high temperature stability of the device ensure its longevity, durability, and consistency despite frequent use in extreme temperature environments. Furthermore, the device is relatively easy to use, operate, and maintain, as it features a variety of options for control and monitoring. The device has simplified RF port control, and allows for instantaneous status, power level, and temperature changes. Furthermore, it offers a variety of protection features to guard against accidental damage and ensure seamless operation, even at high power levels. In conclusion, the BLF898SU is a high-performance FET device that offers efficient and optimized operation. Whether used in audio or radio frequency operations, the device provides superior performance and is cost-effective, versatile, and easy to use. The device\'s GaN technology provides increased efficiency and power amplification, while a wide range of frequencies and high switching speeds make the BLF898SU suitable for many RF systems.

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