| Allicdata Part #: | BLF8G09LS-270GWQ-ND |
| Manufacturer Part#: |
BLF8G09LS-270GWQ |
| Price: | $ 53.05 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Ampleon USA Inc. |
| Short Description: | RF FET LDMOS 65V 20DB SOT1244C |
| More Detail: | RF Mosfet LDMOS 28V 2A 718.5MHz ~ 725.5MHz 20dB 67... |
| DataSheet: |  BLF8G09LS-270GWQ Datasheet/PDF |
| Quantity: | 1000 |
| 96 +: | $ 48.22430 |
Specifications
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Active |
| Transistor Type: | LDMOS |
| Frequency: | 718.5MHz ~ 725.5MHz |
| Gain: | 20dB |
| Voltage - Test: | 28V |
| Current Rating: | -- |
| Noise Figure: | -- |
| Current - Test: | 2A |
| Power - Output: | 67W |
| Voltage - Rated: | 65V |
| Package / Case: | SOT-1244C |
| Supplier Device Package: | CDFM6 |
| Base Part Number: | BLF8G09 |
Description
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BLF8G09LS-270GWQ is an RF Field Effect Transistor (FET) manufactured by NXP. As a switching transistor, this device is best suited for high current, high frequency and fast switching applications. It can be used in a wide range of RF applications, including power amplifiers, receivers, and oscillators. This article will discuss the application fields and working principle of the BLF8G09LS-270GWQ.
Application Fields
The BLF8G09LS-270GWQ is an ideal choice for applications in the UHF band, such as the Cellular, 3G and 4G mobile communication systems. It can be used in Power Amplifier stages and for transmitting at frequencies above 1GHz. It is also well suited for linear amplification in microwave and satellite systems, as well as for receiver stages in wireless communication. Furthermore, this device can be used in LNAs, ID calibration systems, industrial wireless control and other RF applications where low noise and high linearity are required.
Working Principle
The BLF8G09LS-270GWQ is an n-channel Enhancement Mode Field Effect Transistor (FET). It consists of a lightly doped n-type silicon substrate, covered by a layer of gate oxide which acts as an electrical insulator. An electrically conducting gate terminal is placed on top of the oxide layer. The substrate has two side walls sealed to form a uniform channel between the source and drain terminals. When voltage is applied to the gate, it produces an electric field in the substrate which modifies its conductivity, allowing the transistor to operate in either enhancement or depletion mode.When the electric field is applied, free electrons in the substrate will typically drift towards the gate, creating an n-channel. This increases the conductivity between the source and drain, thus allowing current to flow. At the same time, the gate electric field will reduce the mobility of electrons in the opposite direction. The result is a sharp increase in current between the source and drain. This is known as the “channel effect” of the transistor.The BLF8G09LS-270GWQ has a maximum operating current of 9A, and a maximum operating voltage of 270V. It is capable of handling up to 1.8W of power. It is also designed to minimize noise, with a Noise Figure of 2dB.
Conclusion
The BLF8G09LS-270GWQ is a versatile Field Effect Transistor (FET) well suited for UHF applications up to 1GHz. Its n-channel Enhancement Mode design, maximum operating current of 9A, and maximum operating voltage of 270V make it a great choice for amplifying low-noise signals. It can also be used for power amplification, receivers, oscillators, LNAs and other industrial wireless control applications.
The specific data is subject to PDF, and the above content is for reference
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