BLF8G20LS-400PGVJ

The BLF8G20LS-400PGVJ is a high power GaN Heterojunction Field Effect Transistor (HFET) which is designed to operate in the frequency range from DC to 8GHz. The device is housed in a low-profile, 3 mm × 3 mm LFCSP (Lead-frame Chip Scale Package) for applications requiring high efficiency and small form factor designs.

The BLF8G20LS-400PGVJ is a high power GaN Heterojunction Field Effect Transistor (HFET) designed to operate in the frequency range from DC to 8GHz. The device operates as a normally-off switch, providing up to 400W CW output power. It has a high linearity performance and operates at high frequencies with excellent gain and efficiency. The device also has a low threshold voltage and a low on-state drain current. The device is ideal for power amplifiers, voltage controlled oscillators, digital frequency triplers, RF switches, LNAs, Doherty amplifiers and impedance matching networks.

The BLF8G20LS-400PGVJ is a normally-off device, meaning that the Gate voltage must be driven above the pinch-off voltage in order to turn on the device. Once the Gate voltage reaches the pinch-off voltage, the device is turned on. When the Gate voltage is below the pinch-off voltage, the device is off. Once the Gate voltage is above the pinch-off voltage, the device is turned on and its drain current increases. The drain current is controlled by the Gate voltage, which is biasing the Gate of the device to control the current through the device. The device is driven by a voltage source so that the drain current is kept constant.

The BLF8G20LS-400PGVJ can be used in a variety of applications, such as power amplifiers, voltage controlled oscillators, digital frequency triplers, RF switches, LNAs, Doherty amplifiers and impedance matching networks. It is well suited for use as a switch or amplifier in high power and high frequency applications. The BLF8G20LS-400PGVJ’s low threshold voltage, low on-state drain current, and high frequency operation make it an ideal device for high power, high efficiency designs. Additionally, the small form factor of the 3 mm × 3 mm LFCSP makes it an ideal choice for designs requiring small form factor and high efficiency.