Allicdata Part #: | 1603-1017-ND |
Manufacturer Part#: |
BLF882SU |
Price: | $ 86.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 104V 20.6DB SOT502B |
More Detail: | RF Mosfet LDMOS 50V 100mA 705MHz 20.6dB 200W CDFM4 |
DataSheet: | BLF882SU Datasheet/PDF |
Quantity: | 50 |
1 +: | $ 78.54840 |
10 +: | $ 74.83210 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 705MHz |
Gain: | 20.6dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 100mA |
Power - Output: | 200W |
Voltage - Rated: | 104V |
Package / Case: | SOT-502B |
Supplier Device Package: | CDFM4 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BLF882SU is a Silicon N-Channel RF MOSFET created by ON Semiconductor. The part is a 3-pin transistor package with a guaranteed minimum power of 10dBm. Its major application field is wireless communication, such as mobile phones, GSM, and Wi-Fi.
Introduction to BLF882SU
The BLF882SU, like most N-channel RF transistors, is a Nonlinear device. It offers a high value for linearity, meaning there is minimal distortion of the RF signal, and offers low noise. This is an important feature for any wireless communication-related application, and BLF882SU is able to provide this value with ease. The BLF882SU also operates at an ultra-fast switching speed of 10V/nsec, meaning it can handle complex RF signals with ease.
Working principle
The BLF882SU has a MOSFET (metal–oxide–semiconductor field-effect transistor) structure and operates as a three-terminal device. The gate terminal, source terminal, and drain terminal all play a role in the performance of the BLF882SU. The gate terminal controls the flow of current through the device. The source terminal allows electrons to flow in and out of the gate region and the drain terminal carries the load current. When the gate voltage is increased, the electrons coming out of the source region will be attracted to the “gate region” and will cause a current to flow from the drain to the source region.
In RF applications, the gate voltage acts as a switch and hence, increases or decreases the flow of current from the source to drain depending upon the input voltage applied. The working of the BLF882SU is similar to any general purpose MOSFET with the difference being it is designed to deliver a high RF power.
Advantages
The BLF882SU offers numerous advantages for its application field, namely wireless communication. The 10dBm minimum power capability allows it to handle more complex wireless signals without distortion, allowing for better data transmission. Also, its switching speed of 10V/nsec allows it to handle complex signals with ease. Finally, its low noise makes it suitable for wireless applications.
Conclusion
The BLF882SU is an ideal choice for any wireless application due to its capacity to deliver high RF power and its low noise properties. Its ultra-fast switching speed also makes it ideal for handling complex RF signals. In addition, its high linearity values mean there is minimal distortion of the RF signal. All these characteristics make it a great choice for applications like mobile phones, GSM, and Wi-Fi.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BLF8G22LS-160BV,11 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF8G22LS-160BV:11 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF888A,112 | Ampleon USA ... | 148.78 $ | 222 | RF FET LDMOS 110V 21DB SO... |
BLF882U | Ampleon USA ... | 86.41 $ | 87 | RF FET LDMOS 104V 20.6DB ... |
BLF884PS,112 | Ampleon USA ... | 93.18 $ | 45 | RF FET LDMOS 104V 21DB SO... |
BLF8G22LS-270J | Ampleon USA ... | 51.72 $ | 100 | RF FET LDMOS 65V 17.7DB S... |
BLF882SU | Ampleon USA ... | 86.41 $ | 50 | RF FET LDMOS 104V 20.6DB ... |
BLF8G20LS-400PGVJ | Ampleon USA ... | 51.72 $ | 100 | RF FET LDMOS 65V 19DB SOT... |
BLF8G22LS-270GVJ | Ampleon USA ... | 51.72 $ | 100 | RF FET LDMOS 65V 17.3DB S... |
BLF8G20LS-230VU | Ampleon USA ... | 53.33 $ | 107 | RF FET LDMOS 65V 18DB SOT... |
BLF8G20LS-400PVU | Ampleon USA ... | 60.28 $ | 105 | RF FET LDMOS 65V 19DB SOT... |
BLF8G10LS-300PJ | Ampleon USA ... | 77.42 $ | 100 | RF FET LDMOS 65V 20.5DB S... |
BLF881S,112 | Ampleon USA ... | 72.11 $ | 52 | RF FET LDMOS 104V 21DB SO... |
BLF884P,112 | Ampleon USA ... | 93.18 $ | 147 | RF FET LDMOS 104V 21DB SO... |
BLF888DSU | Ampleon USA ... | 165.33 $ | 60 | RF FET LDMOS 104V 21DB SO... |
BLF8G22LS-270GV,12 | Ampleon USA ... | 60.28 $ | 96 | RF FET LDMOS 65V 17.3DB S... |
BLF820 | TE Connectiv... | 0.0 $ | 1000 | FILTER LC 2UH/820PF SMDLC... |
BLF8G22LS-270U | Ampleon USA ... | 60.28 $ | 60 | RF FET LDMOS 65V 17.7DB S... |
BLF8G20LS-400PGVQ | Ampleon USA ... | 60.28 $ | 60 | RF FET LDMOS 65V 19DB SOT... |
BLF8G09LS-400PWU | Ampleon USA ... | 60.28 $ | 60 | RF FET LDMOS 65V 20.6DB S... |
BLF8G09LS-400PGWQ | Ampleon USA ... | 60.28 $ | 53 | RF FET LDMOS 65V 20.6DB S... |
BLF8G10LS-300PU | Ampleon USA ... | 87.47 $ | 60 | RF FET LDMOS 65V 20.5DB S... |
BLF888B,112 | Ampleon USA ... | 157.05 $ | 172 | RF FET LDMOS 104V 21DB SO... |
BLF888BS,112 | Ampleon USA ... | 157.05 $ | 126 | RF MOSFET LDMOS DUAL 50V ... |
BLF888ESU | Ampleon USA ... | 190.11 $ | 44 | RF FET LDMOS 104V 17DB SO... |
BLF898SU | Ampleon USA ... | 216.71 $ | 27 | RF MOSFET LDMOS 50V SOT53... |
BLF8G09LS-400PWJ | Ampleon USA ... | 51.72 $ | 1000 | RF FET LDMOS 65V 20.6DB S... |
BLF8G09LS-400PGWJ | Ampleon USA ... | 51.72 $ | 1000 | RF FET LDMOS 65V 20.6DB S... |
BLF871,112 | Ampleon USA ... | 91.19 $ | 281 | RF FET LDMOS 89V 19DB SOT... |
BLF879PS,112 | Ampleon USA ... | 120.15 $ | 55 | RF FET LDMOS 104V 21DB SO... |
BLF879P,112 | Ampleon USA ... | 120.15 $ | 40 | RF FET LDMOS 104V 21DB SO... |
BLF8G10LS-160,118 | Ampleon USA ... | 42.34 $ | 100 | RF FET LDMOS 65V 19.7DB S... |
BLF8G20LS-230VJ | Ampleon USA ... | 45.67 $ | 100 | RF FET LDMOS 65V 18DB SOT... |
BLF8G24LS-150GVJ | Ampleon USA ... | 45.67 $ | 100 | RF FET LDMOS 65V 19DB SOT... |
BLF8G27LS-100GVQ | Ampleon USA ... | 45.84 $ | 96 | RF FET LDMOS 65V 17DB SOT... |
BLF8G27LS-150GVQ | Ampleon USA ... | 53.33 $ | 94 | RF FET LDMOS 65V 18DB SOT... |
BLF8G22LS-140U | Ampleon USA ... | 44.75 $ | 49 | RF FET LDMOS 65V 18.5DB S... |
BLF8G10LS-270GVJ | Ampleon USA ... | 45.67 $ | 100 | RF FET LDMOS 65V 19.5DB S... |
BLF8G27LS-150GVJ | Ampleon USA ... | 45.67 $ | 100 | RF FET LDMOS 65V 18DB SOT... |
BLF8G24LS-100VU | Ampleon USA ... | 45.7 $ | 60 | RF FET LDMOS 65V 18DB SOT... |
FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...
FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...
FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...
FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...