BLF882SU Allicdata Electronics
Allicdata Part #:

1603-1017-ND

Manufacturer Part#:

BLF882SU

Price: $ 86.41
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 104V 20.6DB SOT502B
More Detail: RF Mosfet LDMOS 50V 100mA 705MHz 20.6dB 200W CDFM4
DataSheet: BLF882SU datasheetBLF882SU Datasheet/PDF
Quantity: 50
1 +: $ 78.54840
10 +: $ 74.83210
Stock 50Can Ship Immediately
$ 86.41
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: LDMOS
Frequency: 705MHz
Gain: 20.6dB
Voltage - Test: 50V
Current Rating: --
Noise Figure: --
Current - Test: 100mA
Power - Output: 200W
Voltage - Rated: 104V
Package / Case: SOT-502B
Supplier Device Package: CDFM4
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BLF882SU is a Silicon N-Channel RF MOSFET created by ON Semiconductor. The part is a 3-pin transistor package with a guaranteed minimum power of 10dBm. Its major application field is wireless communication, such as mobile phones, GSM, and Wi-Fi.

Introduction to BLF882SU

The BLF882SU, like most N-channel RF transistors, is a Nonlinear device. It offers a high value for linearity, meaning there is minimal distortion of the RF signal, and offers low noise. This is an important feature for any wireless communication-related application, and BLF882SU is able to provide this value with ease. The BLF882SU also operates at an ultra-fast switching speed of 10V/nsec, meaning it can handle complex RF signals with ease.

Working principle

The BLF882SU has a MOSFET (metal–oxide–semiconductor field-effect transistor) structure and operates as a three-terminal device. The gate terminal, source terminal, and drain terminal all play a role in the performance of the BLF882SU. The gate terminal controls the flow of current through the device. The source terminal allows electrons to flow in and out of the gate region and the drain terminal carries the load current. When the gate voltage is increased, the electrons coming out of the source region will be attracted to the “gate region” and will cause a current to flow from the drain to the source region.

In RF applications, the gate voltage acts as a switch and hence, increases or decreases the flow of current from the source to drain depending upon the input voltage applied. The working of the BLF882SU is similar to any general purpose MOSFET with the difference being it is designed to deliver a high RF power.

Advantages

The BLF882SU offers numerous advantages for its application field, namely wireless communication. The 10dBm minimum power capability allows it to handle more complex wireless signals without distortion, allowing for better data transmission. Also, its switching speed of 10V/nsec allows it to handle complex signals with ease. Finally, its low noise makes it suitable for wireless applications.

Conclusion

The BLF882SU is an ideal choice for any wireless application due to its capacity to deliver high RF power and its low noise properties. Its ultra-fast switching speed also makes it ideal for handling complex RF signals. In addition, its high linearity values mean there is minimal distortion of the RF signal. All these characteristics make it a great choice for applications like mobile phones, GSM, and Wi-Fi.

The specific data is subject to PDF, and the above content is for reference

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