Allicdata Part #: | 568-12792-2-ND |
Manufacturer Part#: |
BLF8G27LS-150GVJ |
Price: | $ 45.67 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 65V 18DB SOT1244C |
More Detail: | RF Mosfet LDMOS 28V 1.3A 2.6GHz ~ 2.7GHz 18dB 45W ... |
DataSheet: | BLF8G27LS-150GVJ Datasheet/PDF |
Quantity: | 100 |
100 +: | $ 41.51550 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 2.6GHz ~ 2.7GHz |
Gain: | 18dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.3A |
Power - Output: | 45W |
Voltage - Rated: | 65V |
Package / Case: | SOT-1244C |
Supplier Device Package: | CDFM6 |
Base Part Number: | BLF8G27 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BLF8G27LS-150GVJ is a commonly used device in the field of radio frequency electronics, and is used to provide power amplification and switching performance in applications ranging from radio frequency amplifiers to mobile phone power amplifiers. This device is a type of transistor, known as a field effect transistor (FET), and is specifically a metal-oxide semiconductor field effect transistor (MOSFET).
A FET is an active device that is used to control current flow between two terminals. It has a gate terminal which, when energised, acts as a switch and allows current to flow between the drain and source terminals. This type of transistor is used in a variety of analog and digital applications and is particularly useful as it is sensitive to extremely small control voltages. The BLF8G27LS-150GVJ has a breakdown voltage of 150V, which makes it suitable for a variety of applications.
The BLF8G27LS-150GVJ is designed to operate at radio frequencies in the range of 8GHz to 12GHz. The device is designed using a PHEMT process, which makes it suitable for numerous radio frequency amplifier and mixer applications. The device also has fast switching times, low noise, and low distortion.
The working principle of the BLF8G27LS-150GVJ is not complicated. When the gate terminal is energised, a small electric field is created which increases the current flow between the drain and source terminals. This increase in current is what allows the device to act as an amplifier or switch. The operating parameters for the gate terminal vary depending on the application and can range from tens of millivolts to tens of volts.
When the BLF8G27LS-150GVJ is used for radio frequency amplification, the small electric field created between the gate and source terminals increases the current between the drain and source terminals. This increase in current is what causes the device to act as an amplifier and provide amplification of the radio frequency signal.
As a switch, the BLF8G27LS-150GVJ is able to turn circuits on and off quickly and accurately. This makes the device useful for controlling radio frequency signals at very high frequencies, and is used in many types of radio frequency receivers and transmitters. The device is able to switch on and off in microseconds, making it ideal for radio frequency switching applications.
In addition to radio frequency applications, the BLF8G27LS-150GVJ can also be used in other applications, such as power management, control of motors and sensors, and other applications where small control voltages are required. This device is also suitable for use in high frequency switching circuits, as it can operate at frequencies up to 12GHz.
The BLF8G27LS-150GVJ is a versatile device that is suitable for a wide range of radio frequency applications, as well as other applications where small control voltages are required. The device is designed to operate reliably at frequencies up to 12GHz, making it suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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BLF8G20LS-400PGVQ | Ampleon USA ... | 60.28 $ | 60 | RF FET LDMOS 65V 19DB SOT... |
BLF8G09LS-400PWU | Ampleon USA ... | 60.28 $ | 60 | RF FET LDMOS 65V 20.6DB S... |
BLF8G09LS-400PGWQ | Ampleon USA ... | 60.28 $ | 53 | RF FET LDMOS 65V 20.6DB S... |
BLF8G10LS-300PU | Ampleon USA ... | 87.47 $ | 60 | RF FET LDMOS 65V 20.5DB S... |
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BLF8G09LS-400PWJ | Ampleon USA ... | 51.72 $ | 1000 | RF FET LDMOS 65V 20.6DB S... |
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BLF8G27LS-150GVJ | Ampleon USA ... | 45.67 $ | 100 | RF FET LDMOS 65V 18DB SOT... |
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