Allicdata Part #: | 568-12833-ND |
Manufacturer Part#: |
BLF8G20LS-230VU |
Price: | $ 53.33 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 65V 18DB SOT1239B |
More Detail: | RF Mosfet LDMOS 28V 1.8A 1.81GHz ~ 1.88GHz 18dB 55... |
DataSheet: | BLF8G20LS-230VU Datasheet/PDF |
Quantity: | 107 |
1 +: | $ 48.48480 |
10 +: | $ 46.06120 |
100 +: | $ 41.51550 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 1.81GHz ~ 1.88GHz |
Gain: | 18dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.8A |
Power - Output: | 55W |
Voltage - Rated: | 65V |
Package / Case: | SOT-1239B |
Supplier Device Package: | CDFM6 |
Base Part Number: | BLF8G20 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BLF8G20LS-230VU is a type of insulated gate transistor (IGFET) commonly referred to as a metal oxide semiconductor field-effect transistor (MOSFET). It is a common type of field effect transistor (FET) that is widely used in radio frequency (RF) applications.
IGFETs are devices that control the conductivity of a semiconductor using an electric field. A MOSFET is an unipolar device, meaning that it uses only electrons or holes to allow or block the flow of current. This principle of operation is also known as voltage gating.
In a typical MOSFET, there are three main terminals. These are the gate, the source, and the drain. The gate is responsible for controlling the current flow between source and drain. When the gate is energized, a voltage is applied to the gate-source junction and a depletion zone is generated in the source-drain region. This zone blocks the flow of electrons, effectively preventing current flow. Conversely, when the gate is not energized, current can flow freely between source and drain.
BLF8G20LS-230VU is specifically designed for RF applications. It has a maximum power rating of 200 W and a working frequency range of 5 to 1500 MHz. It features a N-channel enhancement mode MOSFET transistor with an extremely low capacitance and a maximum drain-source voltage rating of 200V. The device offers a very low output capacitance of 5.5 pF. This makes it ideal for use in low-noise, high-frequency applications.
In addition, the BLF8G20LS-230VU device features high current handling, low resistance, and heat dissipation ratings. Additionally, it has a low switching time and short circuit protection, making it suitable for use in high-performance circuits.
The BLF8G20LS-230VU is a versatile device and can be used in a variety of RF applications, such as antennas and RF amplifiers. Its wide voltage range and low capacitance makes it ideal for use in high-frequency switching and amplification circuits, as well as general-purpose amplifier designs. Thanks to its low capacitance and short circuit protection, the device is suitable for use in applications where a higher current tolerance is required, such as power amplifiers and low-noise receivers.
In conclusion, the BLF8G20LS-230VU is a versatile RF device, suitable for use in a variety of applications. It offers high performance, low capacitance, and short circuit protection, making it suitable for high-frequency switching, amplification, and general-purpose amplifier circuits. Additionally, it has a low resistance, high current handling, and impressive heat dissipation ratings. All in all, it can be a great choice for designs that require superior performance and reliability.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BLF8G22LS-160BV,11 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF8G22LS-160BV:11 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
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BLF884PS,112 | Ampleon USA ... | 93.18 $ | 45 | RF FET LDMOS 104V 21DB SO... |
BLF8G22LS-270J | Ampleon USA ... | 51.72 $ | 100 | RF FET LDMOS 65V 17.7DB S... |
BLF882SU | Ampleon USA ... | 86.41 $ | 50 | RF FET LDMOS 104V 20.6DB ... |
BLF8G20LS-400PGVJ | Ampleon USA ... | 51.72 $ | 100 | RF FET LDMOS 65V 19DB SOT... |
BLF8G22LS-270GVJ | Ampleon USA ... | 51.72 $ | 100 | RF FET LDMOS 65V 17.3DB S... |
BLF8G20LS-230VU | Ampleon USA ... | 53.33 $ | 107 | RF FET LDMOS 65V 18DB SOT... |
BLF8G20LS-400PVU | Ampleon USA ... | 60.28 $ | 105 | RF FET LDMOS 65V 19DB SOT... |
BLF8G10LS-300PJ | Ampleon USA ... | 77.42 $ | 100 | RF FET LDMOS 65V 20.5DB S... |
BLF881S,112 | Ampleon USA ... | 72.11 $ | 52 | RF FET LDMOS 104V 21DB SO... |
BLF884P,112 | Ampleon USA ... | 93.18 $ | 147 | RF FET LDMOS 104V 21DB SO... |
BLF888DSU | Ampleon USA ... | 165.33 $ | 60 | RF FET LDMOS 104V 21DB SO... |
BLF8G22LS-270GV,12 | Ampleon USA ... | 60.28 $ | 96 | RF FET LDMOS 65V 17.3DB S... |
BLF820 | TE Connectiv... | 0.0 $ | 1000 | FILTER LC 2UH/820PF SMDLC... |
BLF8G22LS-270U | Ampleon USA ... | 60.28 $ | 60 | RF FET LDMOS 65V 17.7DB S... |
BLF8G20LS-400PGVQ | Ampleon USA ... | 60.28 $ | 60 | RF FET LDMOS 65V 19DB SOT... |
BLF8G09LS-400PWU | Ampleon USA ... | 60.28 $ | 60 | RF FET LDMOS 65V 20.6DB S... |
BLF8G09LS-400PGWQ | Ampleon USA ... | 60.28 $ | 53 | RF FET LDMOS 65V 20.6DB S... |
BLF8G10LS-300PU | Ampleon USA ... | 87.47 $ | 60 | RF FET LDMOS 65V 20.5DB S... |
BLF888B,112 | Ampleon USA ... | 157.05 $ | 172 | RF FET LDMOS 104V 21DB SO... |
BLF888BS,112 | Ampleon USA ... | 157.05 $ | 126 | RF MOSFET LDMOS DUAL 50V ... |
BLF888ESU | Ampleon USA ... | 190.11 $ | 44 | RF FET LDMOS 104V 17DB SO... |
BLF898SU | Ampleon USA ... | 216.71 $ | 27 | RF MOSFET LDMOS 50V SOT53... |
BLF8G09LS-400PWJ | Ampleon USA ... | 51.72 $ | 1000 | RF FET LDMOS 65V 20.6DB S... |
BLF8G09LS-400PGWJ | Ampleon USA ... | 51.72 $ | 1000 | RF FET LDMOS 65V 20.6DB S... |
BLF871,112 | Ampleon USA ... | 91.19 $ | 281 | RF FET LDMOS 89V 19DB SOT... |
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BLF879P,112 | Ampleon USA ... | 120.15 $ | 40 | RF FET LDMOS 104V 21DB SO... |
BLF8G10LS-160,118 | Ampleon USA ... | 42.34 $ | 100 | RF FET LDMOS 65V 19.7DB S... |
BLF8G20LS-230VJ | Ampleon USA ... | 45.67 $ | 100 | RF FET LDMOS 65V 18DB SOT... |
BLF8G24LS-150GVJ | Ampleon USA ... | 45.67 $ | 100 | RF FET LDMOS 65V 19DB SOT... |
BLF8G27LS-100GVQ | Ampleon USA ... | 45.84 $ | 96 | RF FET LDMOS 65V 17DB SOT... |
BLF8G27LS-150GVQ | Ampleon USA ... | 53.33 $ | 94 | RF FET LDMOS 65V 18DB SOT... |
BLF8G22LS-140U | Ampleon USA ... | 44.75 $ | 49 | RF FET LDMOS 65V 18.5DB S... |
BLF8G10LS-270GVJ | Ampleon USA ... | 45.67 $ | 100 | RF FET LDMOS 65V 19.5DB S... |
BLF8G27LS-150GVJ | Ampleon USA ... | 45.67 $ | 100 | RF FET LDMOS 65V 18DB SOT... |
BLF8G24LS-100VU | Ampleon USA ... | 45.7 $ | 60 | RF FET LDMOS 65V 18DB SOT... |
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