BLF8G22LS-270GVJ Allicdata Electronics
Allicdata Part #:

568-12784-2-ND

Manufacturer Part#:

BLF8G22LS-270GVJ

Price: $ 51.72
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 65V 17.3DB SOT1244C
More Detail: RF Mosfet LDMOS 28V 2.4A 2.11GHz ~ 2.17GHz 17.3dB ...
DataSheet: BLF8G22LS-270GVJ datasheetBLF8G22LS-270GVJ Datasheet/PDF
Quantity: 100
100 +: $ 47.02500
Stock 100Can Ship Immediately
$ 51.72
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: LDMOS
Frequency: 2.11GHz ~ 2.17GHz
Gain: 17.3dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 2.4A
Power - Output: 80W
Voltage - Rated: 65V
Package / Case: SOT-1244C
Supplier Device Package: CDFM6
Base Part Number: BLF8G22
Description

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BLF8G22LS-270GVJ is an advanced high-frequency transistor designed as a compact solution for various RF applications. It is a laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET), which combines a vertical NPN, disposed on the surface of a semiconductor substrate, and a lateral PNP, which provides the output power gain desired for RF amplifier applications. The device provides high gain, excellent linearity and a high degree of immunity to distortion.

The BLF8G22LS-270GVJ is a low-frequency field-effect transistor (FET) designed for applications up to 1 GHz. It is designed to be used in logic circuits to provide isolation between two logic levels, or to drive a large load at higher power. It is also used in RF power base stations and amplifiers, in addition to operating in radio frequency circuits.

This device uses an enhancement mode of transistor operation, where the current flow is controlled by the gate-source voltage. Applying a positive voltage to the gate terminal will turn on the transistor, allowing current to flow between the source and the drain. With this type of transistor, the source voltage and drain current can be preloaded and the device will operate at the same current level even though the gate voltage changes. In this way, a continuously adjustable voltage can be applied to the FET\'s gate terminal to adjust the drain current.

The BLF8G22LS-270GVJ features a low gate resistance, low voltage characteristics and excellent linearity over a wide range of frequencies. It is well-suited for low noise amplifier applications, due to its good linearity, low distortion and excellent noise performance. Its substantial gain compensation provides good operation at higher frequencies.

This device is available in a variety of packaging styles including through-hole, surface mount and integrated circuit packages, making it ideal for use in a wide range of high-frequency applications. The BLF8G22LS-270GVJ is a great choice for applications requiring a combination of high gain, low noise and wide bandwidth.

The specific data is subject to PDF, and the above content is for reference

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