BLF882U

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The BLF882U is a high-performance, small-signal, Enhancement Mode Gallium Nitride (eGaN) Field Effect Transistor (FET). Because of its high current carrying capability, this device is ideal for efficient high-frequency power amplification applications such as high-power radio frequency (RF) power amplifiers and has a wide range of potential applications in consumer and industrial wireless communications systems.

The BLF882U is a high-performance eGaN FET that has the advantages of higher performance, lower power consumption and greater efficiency than conventional silicon transistors. It has a low input capacitance, low gate capacitance and low gate-source capacitance. These characteristics combined with its low gate threshold voltage, make it ideal for applications that require high levels of performance and efficiency at high frequencies.

The BLF882U is based on an enhancement-mode, metal-oxide-semiconductor (MOS) structure with n-channel gate electrodes. It is an N-channel MOSFET with a low gate threshold voltage (Vth) and a large magnitude of on-state drain current (Ids). The device has a breakdown voltage rating of 30V and a maximum drain-source voltage rating of 40V. The drain-source on-state resistance (Rds(on)) of the BLF882U is typically 1.65 ohms.

The BLF882U\'s high-performance and low-power operation makes it ideal for high-frequency power amplification applications such as RF power amplifiers. It is also suitable for switching applications, where high efficiency and fast switching times are required. Other applications include low-noise amplifiers, low-frequency power amplifiers, switching power supplies and frequency synthesizers.

The working principle of the device depends on the gate biasing, which is used to control the on-off switching of the device. The drain current can be controlled by varying the gate voltage applied to the gate terminal of the device. When a positive voltage is applied to the gate terminal, the device is turned on and the drain current flows. When the gate voltage is less than the device’s threshold voltage, the device is turned off and no drain current flows. This can be used to switch on and off the device as required in various applications.

The BLF882U is an ideal choice for high-frequency power applications, low-noise amplifiers, low-frequency power amplifiers, switching power supplies, and frequency synthesizers. It combines high performance and low-power operation, making it suitable for a wide range of applications. As such, it has become a popular choice for many consumers and industrial wireless communication systems.

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