Allicdata Part #: | 568-12832-ND |
Manufacturer Part#: |
BLF8G09LS-400PGWQ |
Price: | $ 60.28 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 65V 20.6DB SOT1242C |
More Detail: | RF Mosfet LDMOS (Dual), Common Source 28V 3.4A 718... |
DataSheet: | BLF8G09LS-400PGWQ Datasheet/PDF |
Quantity: | 53 |
1 +: | $ 54.80370 |
10 +: | $ 51.97500 |
100 +: | $ 47.02500 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | LDMOS (Dual), Common Source |
Frequency: | 718.5MHz ~ 725.5MHz |
Gain: | 20.6dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 3.4A |
Power - Output: | 95W |
Voltage - Rated: | 65V |
Package / Case: | SOT-1242C |
Supplier Device Package: | CDFM8 |
Base Part Number: | BLF8G09 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BLF8G09LS-400PGWQ Transistor is an RF transistor designed for use in Consumer, Automotive, and Industrial/Medical applications. It is an N-channel enhancement-mode field-effect transistor manufactured using RF-LIV vertical diffusion with proprietary process technologies.The BLF8G09LS-400PGWQ Daitan Field Effect Transistor features high forward and reverse breakdown voltages. It has low capacitance, low RDS(on) and high power, making it suitable for RF amplifier, RF front-end and small-signal applications in the 1-4GHz frequency range.The BLF8G09LS-400PGWQ is a depletion mode by design. It is suitable for use in DC and AC circuits and has good power dissipation and high input impedance. The transistor can be used in both voltage and current amplification situations.The working principle of the BLF8G09LS-400PGWQ is based on field effect. The transistor operates through the control of current by applying a gate voltage, which creates an electric field that acts on the source-drain junction of the transistor. The amount of current flowing through the device depends on the voltage applied to the gate. As the gate voltage increases, the electric field is strengthened and more current is let through. When the gate voltage is increased beyond the threshold voltage of the transistor, it is said to be in saturation and the maximum amount of current is allowed to pass through it.The BLF8G09LS-400PGWQ is an RF transistor with a variety of different application fields. It can be used as a switch, amplifier, oscillator or voltage regulator. In switching applications, it can be used as a power switch, signal switch or automatic gain control switch. It can be used as an amplifier in transmitters, low noise amplifiers, or high power amplifiers. For oscillators, it can be used in FM or AM communication systems or for oscillator bias control in system components. As a voltage regulator, it can be used in clamp circuits, power supplies, isolation circuits or amplifiers.In conclusion, the BLF8G09LS-400PGWQ is an extremely versatile RF transistor, with a range of different applications and a broad range of frequencies in which it operates. Its field effect operation makes the device easy to use and its low on resistance makes it ideal for high power applications. With its easy to use and reliable design, the BLF8G09LS-400PGWQ is an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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BLF8G22LS-160BV:11 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
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BLF8G22LS-270J | Ampleon USA ... | 51.72 $ | 100 | RF FET LDMOS 65V 17.7DB S... |
BLF882SU | Ampleon USA ... | 86.41 $ | 50 | RF FET LDMOS 104V 20.6DB ... |
BLF8G20LS-400PGVJ | Ampleon USA ... | 51.72 $ | 100 | RF FET LDMOS 65V 19DB SOT... |
BLF8G22LS-270GVJ | Ampleon USA ... | 51.72 $ | 100 | RF FET LDMOS 65V 17.3DB S... |
BLF8G20LS-230VU | Ampleon USA ... | 53.33 $ | 107 | RF FET LDMOS 65V 18DB SOT... |
BLF8G20LS-400PVU | Ampleon USA ... | 60.28 $ | 105 | RF FET LDMOS 65V 19DB SOT... |
BLF8G10LS-300PJ | Ampleon USA ... | 77.42 $ | 100 | RF FET LDMOS 65V 20.5DB S... |
BLF881S,112 | Ampleon USA ... | 72.11 $ | 52 | RF FET LDMOS 104V 21DB SO... |
BLF884P,112 | Ampleon USA ... | 93.18 $ | 147 | RF FET LDMOS 104V 21DB SO... |
BLF888DSU | Ampleon USA ... | 165.33 $ | 60 | RF FET LDMOS 104V 21DB SO... |
BLF8G22LS-270GV,12 | Ampleon USA ... | 60.28 $ | 96 | RF FET LDMOS 65V 17.3DB S... |
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BLF8G22LS-270U | Ampleon USA ... | 60.28 $ | 60 | RF FET LDMOS 65V 17.7DB S... |
BLF8G20LS-400PGVQ | Ampleon USA ... | 60.28 $ | 60 | RF FET LDMOS 65V 19DB SOT... |
BLF8G09LS-400PWU | Ampleon USA ... | 60.28 $ | 60 | RF FET LDMOS 65V 20.6DB S... |
BLF8G09LS-400PGWQ | Ampleon USA ... | 60.28 $ | 53 | RF FET LDMOS 65V 20.6DB S... |
BLF8G10LS-300PU | Ampleon USA ... | 87.47 $ | 60 | RF FET LDMOS 65V 20.5DB S... |
BLF888B,112 | Ampleon USA ... | 157.05 $ | 172 | RF FET LDMOS 104V 21DB SO... |
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BLF888ESU | Ampleon USA ... | 190.11 $ | 44 | RF FET LDMOS 104V 17DB SO... |
BLF898SU | Ampleon USA ... | 216.71 $ | 27 | RF MOSFET LDMOS 50V SOT53... |
BLF8G09LS-400PWJ | Ampleon USA ... | 51.72 $ | 1000 | RF FET LDMOS 65V 20.6DB S... |
BLF8G09LS-400PGWJ | Ampleon USA ... | 51.72 $ | 1000 | RF FET LDMOS 65V 20.6DB S... |
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BLF8G10LS-160,118 | Ampleon USA ... | 42.34 $ | 100 | RF FET LDMOS 65V 19.7DB S... |
BLF8G20LS-230VJ | Ampleon USA ... | 45.67 $ | 100 | RF FET LDMOS 65V 18DB SOT... |
BLF8G24LS-150GVJ | Ampleon USA ... | 45.67 $ | 100 | RF FET LDMOS 65V 19DB SOT... |
BLF8G27LS-100GVQ | Ampleon USA ... | 45.84 $ | 96 | RF FET LDMOS 65V 17DB SOT... |
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BLF8G27LS-150GVJ | Ampleon USA ... | 45.67 $ | 100 | RF FET LDMOS 65V 18DB SOT... |
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