BLF8G10LS-270V,112

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RF transistors are devices used in wireless communications and radio frequency (RF) amplifiers. The BLF8G10LS-270V,112 is a high gain rf power LDMOS transistor manufactured by NXP. It is designed for high power output for 802.11RF and Cellular Base Stations, microwave ovens, high power amplifiers, point-to-point radio links and CATV applications.

The BLF8G10LS-270V,112 datasheet provides details about the transistor, such as its size (1.76" x 1.80"), maximum drain-source voltage (8W 2.85V), maximum drain current (2.5A), and RF output power (Pout): 8W @ 845MHz and 10W @ 915MHz. It also has a Collector Cutoff Current of: 0.02A, Gain of: 18dB, and optimally designed to provide high efficiency and linearity in the operating range.

The BLF8G10LS-270V,112 is constructed with a Lateral Double-Diffused Metal-Oxide-Semiconductor (LDMOS) technology which makes it suitable for high voltage and high current applications. It combines the benefits of a high power device with the low parasitic capacitance of the LDMOS technology, allowing for efficient operation in the high frequency range.

The BLF8G10LS-270V,112 has a number of features that make it an excellent choice for RF amplification purposes. It has a large voltage breakdown voltage, which allows it to operate at higher current densities and temperatures. This makes it a highly reliable device in the RF amplifier, providing excellent power and efficiency. It is designed to operate in excess of 845MHz and can be used in a wide range of applications. It is also highly efficient, as it exhibits a very low drain-source resistance when operating at high frequencies. This allows for faster switching times and higher power output.

The BLF8G10LS-270V,112 is an ideal choice for high power applications, where high output power is required with a minimal amount of power dissipation. It is capable of meeting the demands of 802.11RF and Cellular Base Stations, microwave ovens, high power amplifiers, point-to-point radio links, and CATV applications. As it operates at high frequencies, it is well-suited for these types of applications where high frequency signals are involved. Additionally, its high drain-source resistance promotes fast switching times. This can be beneficial in applications that require high speed signal processing.

The BLF8G10LS-270V,112 is an ideal selection for the latest high power applications, where a higher output power is required with minimal power dissipation. It has been designed to provide optimum performance at high frequencies and is an ideal choice for applications that require high frequency signals. The combination of high power and low power dissipation makes it an ideal choice for RF amplification needs.

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