BLF8G19LS-170BV,11

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	LDMOS (Dual), Common Source
Frequency:	1.94GHz ~ 1.99GHz
Gain:	18dB
Voltage - Test:	32V
Current Rating:	--
Noise Figure:	--
Current - Test:	1.3A
Power - Output:	60W
Voltage - Rated:	65V
Package / Case:	SOT-1120B
Supplier Device Package:	LDMOST

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BLF8G19LS-170BV are power transistors designed for use in a number of applications where high power and efficiency are required. The transistors are MOSFETs (metal-oxide-semiconductor field-effect transistors), which have become the most popular type of power transistor due to their low forward bias and low on-state resistance. They are typically found in high voltage switching applications and are used in applications with frequencies up to 5 GHz.

Applications:

• Switchmode power supplies
• AC to DC converters
• RF circuits
• Radar systems
• Battery chargers
• Amplifiers
• xDSL and telecom systems

Working Principle:

These transistors operate by using a voltage signal to control the current flow between the source and the drain. They have an insulated gate, which allows a voltage to be applied between the gate and the source, thus modulating the current flow through the transistor. This modulation is the key to the performance of the transistor, enabling high levels of precision and efficiency.The BLF8G19LS-170BV transistors have a low on-state drain-source resistance (RDS on) of 0.015 ohms, allowing them to be used in applications requiring high current density and efficiency. They also feature an integrated Schottky diode, which helps to protect against reverse voltage and current spikes. This increases their reliability and robustness. The transistors are capable of providing a high speed switching response, making them suitable for use in high frequency applications such as RF circuits.In RF applications, these transistors are used to control the amplification of a signal. This process occurs as the voltage applied to the gate of the transistor controls the current flow between the source and the drain. When a voltage is applied to the gate that is higher than that of the source, current can flow from the drain to the source, thus amplifying the signal. When the voltage applied to the gate is lower than that of the source, the current flow reverses, resulting in a decrease in the signal.The performance of the BLF8G19LS-170BV transistors can be further improved with additional design elements. For example, the use of an inductor in the source or drain circuit helps to reduce reverse currents and increase the efficiency of the transistor. In addition, the use of an anti-corona guard ring helps to reduce corona ions, which can cause problems in high frequency applications.In conclusion, the BLF8G19LS-170BV transistors are useful for a range of applications needing high power and efficiency. They are designed for use in switchmode power supplies, AC to DC converters, voltage regulators, xDSL systems, amplifiers and radar systems. Furthermore, their low RDS on combined with their excellent RF performance makes them well-suited for use in RF circuits. With their robust design and integrated Schottky diode, these transistors provide a reliable performance in a wide range of applications.

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