BLF8G22LS-270V,118 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	2.11GHz ~ 2.17GHz
Gain:	17.3dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	2.4A
Power - Output:	80W
Voltage - Rated:	65V
Package / Case:	SOT-1244B
Supplier Device Package:	CDFM6
Base Part Number:	BLF8G22

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The BLF8G22LS-270V,118 is a high-speed depletion-mode N-Channel Junction Field-Effect Transistor (JFET), specially designed for radio-frequency (RF) applications. It is a small-signal transistor that is used to amplify or switch electronic signals. This type of transistor is also known as an unipolar or non-bipolar transistor because it has no PN or NPN semiconductor junctions. The BLF8G22LS-270V,118 is made up of an N-type semiconductor material, usually silicon and the reference name is given by its manufacturer, the Hamburg, Germany headquartered company, Vishay Semiconductor GmbH. It is a dual, double-diffused insulated-gate FET (IGFET) that operates with a voltage supply range from -15 to -45V normally or from -25 to -90V for severely degraded mode. The specified maximum drain current of the MOSFET is 12mA and the maximum gate-source voltage is comprised of 7V drain-source, 45V DC gate-source, and 55V AC gate-source.Working Principle The BLF8G22LS-270V,118 transistor operates on the principle of the field-effect transistor (FET), where the flow of electric current is controlled by varying the voltage applied to the gate-source. This type of transistor is dependent on its gate voltage to produce current through the channel and hence, there is almost no gate current. As such, this transistor has a high impedance and low power output, which makes it suitable for low-noise, low-power audio amplification and other low-voltage applications. By manipulating the gate voltage, the device operates in several ways: as a resistor, a capacitor, or a current source.When the gate voltage is higher than the source voltage, the channel resistance between the drain and the source will decrease, causing the current to increase. Conversely, when the gate voltage is lower than the source voltage, the channel resistance will increase, causing the current to decrease. The operating frequency of the transistor is usually well in the range of hundreds of megahertz, depending on the load and other parameters of the circuit. Application Field The BLF8G22LS-270V,118 transistor is ideal for a wide range of applications, ranging from low-noise, low-power audio amplification to high-frequency digital processing. This type of transistor is commonly used in audio amplifiers, high speed digital circuits, and oscillators. It is also used in the manufacturing of voltage-controlled oscillators, high-frequency amplifiers and mixers, and voltage regulation. Due to its frequency operation range, this transistor is also suitable for use in radio communication equipment such as high speed modems, satellite receivers and transmitters, and various radio-communication systems. It can even be used in automotive systems such as engine control systems and airbag control systems. In summary, the BLF8G22LS-270V,118 transistor is a high-speed depletion-mode N-Channel Junction Field-Effect Transistor (JFET) that is specially designed for radio-frequency (RF) applications. It operates on the field-effect transistor (FET) principle, where the flow of electric current is controlled by varying the voltage applied to the gate-source. This type of transistor is suitable for a wide range of applications, ranging from low-noise/low-power audio amplification to high-frequency digital processing.

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