BLF8G24LS-100GVQ

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BLF8G24LS-100GVQ is a high-frequency field effect transistor (FET) suitable for RF or microwave applications. It is a physically small, low DC power consumption type transistor on market and features inherently good gain and stability characteristics. It comes with a minimum frequency of DC-2.0 GHz, power gain of 16 dB at 900 MHz and operates from -55°C to 150°C junction temperature.

The BLF8G24LS-100GVQ is a later generation of high-frequency FETs that offer improved performance over the earlier generation transistors. It is a power-efficient type that offers good stability performance as well as high gain characteristics. The transistor is packaged in a SOT-223 package, which is a widely used standard-sized package in the electronics industry.

BLF8G24LS-100GVQ is a type of high-frequency N-channel enhancement-mode field effect transistor. It works in enhancement-mode operation, meaning the transistor\'s drain-source resistance is high when the gate-source voltage is zero or negative. When the gate-source voltage is made positive, it attracts mobile carriers near the drain and source and creates an inversion layer. This lowers the drain-source resistance and allows current to flow from drain to source.

The BLF8G24LS-100GVQ is capable of operating in both continuous and peak operation. Peak operation is when the transistor is operating at maximum power for short bursts of time. This mode is used for applications such as Wi-Fi, 4G/5G, and other wireless applications that require short-term power. Continuous operation is when the transistor is operating at its maximum power for a longer duration.

The BLF8G24LS-100GVQ is used in various RF or microwave applications where power efficiency and high gain are necessary. Popular applications include mobile base station systems, cellular phones, RF transmit/receive modules and antenna arrays. Other uses are high-speed digital communication, digital modulators, power amplifiers, and microwave radio systems.

Overall, the BLF8G24LS-100GVQ is a reliable, high-performance FET transistor that offers excellent RF performance. It features low power consumption and high gain characteristics, making it suitable for a variety of RF and microwave applications. With a minimum frequency of DC-2.0 GHz and power gain of 16 dB at 900 MHz, the BLF8G24LS-100GVQ is an ideal transistor for a range of wireless communication applications.

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