BLF8G24LS-150VJ

The BLF8G24LS-150VJ is a standard-Voltage enhancement-mode gallium-arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high electron mobility transistor (pHEMT). This pHEMT product is designed for use in a variety of wireless applications ranging from wireless infrastructure diodes and oscillators to automotive electronic systems.

The BLF8G24LS-150VJ has a 120 mA maximum Gate-source current, 175 MHz maximum transition frequency, a 2 dB noise figure, and a 24 dB maximum power added efficiency (PAE). The pHEMT provides 10 dB of large-signal gain, 50°C to 150°C temperature range and an excellent linearity performance with a 5:1 input third-order intercept (IP3).

Application Field and Working Principle

The BLF8G24LS-150VJ is mainly used in low noise LNA/Mixer, FC power amplifier, automotive electronic systems and diode oscillators. The pHEMT contains double-gate enhancement-mode enhancement mode GaAs MESFET with a low threshold voltage, smal lgate-source capacitance and high current driving capability with extremely low temperature drift. Currents applied to the gates of the device modulate a large amplitude current flow between source and drain terminals, which are controlled by the gate to source voltage.

This makes it suitable for high efficiency radio frequency (RF) amplifier and low noise RF amplifier applications. The pHEMT is also suitable for high speed and wide band applications such as mixers and oscillators since it can provide low conversion loss and low third-order intercept point. The increased device density and smaller physical size enable the design of small critical footprints.

The BLF8G24LS-150VJ is well-suited for switches in mobile communication systems and low power transmitters as well as in wireless infrastructure applications. The device features high-speed switching and low power dissipation in the off state making it well-suited for high power applications. In addition, the dual-gate design allows for precise gain control for optimal performance in wireless systems.

The BLF8G24LS-150VJ is a low noise amplifier that offers high gain for medium to large power spread spectrum applications in the 4.9 GHz - 6.8 GHz frequency range. The supply voltage ranges from 5V to 9V, enabling the use of a wide range of power amplifiers and other components. The pHEMT has an output of 2 W in an input of 0.5 dBm, and an operating temperature range of -40°C to +85°C.

In conclusion, the BLF8G24LS-150VJ is an ideal product for a variety of wireless applications, and works by modulating a large amplitude current flow between source and drain terminals, controlled by the gate to source voltage. Its low threshold voltage, low gate-source capacitance, and high current driving capability make it suitable for high efficiency RF amplifiers, switches, low power transmitters, mixers, and oscillators, with an excellent linearity performance, enhanced high speed switching and low power dissipation capabilities.