BLF8G27LS-100PJ Allicdata Electronics
Allicdata Part #:

BLF8G27LS-100PJ-ND

Manufacturer Part#:

BLF8G27LS-100PJ

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 65V 18DB SOT1121B
More Detail: RF Mosfet LDMOS (Dual), Common Source 28V 860mA 2....
DataSheet: BLF8G27LS-100PJ datasheetBLF8G27LS-100PJ Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: LDMOS (Dual), Common Source
Frequency: 2.5GHz ~ 2.7GHz
Gain: 18dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 860mA
Power - Output: 25W
Voltage - Rated: 65V
Package / Case: SOT-1121B
Supplier Device Package: LDMOST
Base Part Number: BLF8G27
Description

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The BLF8G27LS-100PJ is a high performance transistor used for RF applications. This type of transistor is known as an FET (Field Effect Transistor) or MOSFET (Metal Oxide Semiconductor Field Effect Transistor).

These transistors are commonly used in high frequency applications such as communication circuit, radio and television transmissions, and broadcast systems. They are also often used in satellite, radar, and military applications. The BLF8G27LS-100PJ is especially important in applications in which low power operation and wide bandwidth capability are needed.

FETs, including MOSFETs, are three-terminal devices with a drain, a source, and a gate. The gate is a key component; when a voltage is applied to the gate it controls the current flowing through the channel. This property of MOSFETs, the ability to control the amount of current without the need for physical contact, is why FETs and MOSFETs have become so popular.

The BLF8G27LS-100PJ is a charge transfer device, meaning that it operates as a current-controlled switch. In this type of device, the voltage required to maintain a constant current is kept low (less than 3 volts). This allows for fast switching speeds and improved efficiency.

Because it is a MOSFET, the BLF8G27LS-100PJ has a high input impedance and a low output impedance. This means that it can be used in a wide variety of applications, including high-frequency signal processing. The device is also designed to minimize thermal shift and noise. This makes it suitable for high-speed signal processing and communication systems.

The BLF8G27LS-100PJ is also scalable and can be used in applications at different power levels. It is capable of handling up to 0.85 Watts and has a maximum voltage rating of 100V. The device is also optimized for frequency ranges from 10 MHz to 4 GHz.

The BLF8G27LS-100PJ can be used in a variety of different applications. It is particularly useful for creating high power amplifiers, switches, filters, mixers, and oscillators. This device is also well suited for use in wireless communications, radio frequency (RF) amplifiers, and pulse width modulation (PWM) circuits.

The BLF8G27LS-100PJ is a cost-effective, reliable solution for many RF applications. It offers excellent performance and is designed to be easy to use. This transistor is a great choice for any design that requires a high frequency, high performance, and low power solution.

The specific data is subject to PDF, and the above content is for reference

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