BLF8G27LS-140V,118

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Last Time Buy
Transistor Type:	LDMOS
Frequency:	2.63GHz ~ 2.69GHz
Gain:	17.4dB
Voltage - Test:	32V
Current Rating:	--
Noise Figure:	--
Current - Test:	1.3A
Power - Output:	45W
Voltage - Rated:	65V
Package / Case:	SOT-1120B
Supplier Device Package:	LDMOST
Base Part Number:	BLF8G27

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BLF8G27LS-140V,118 is an enhancement-mode gallium nitride (GaN) High Electron Mobility Transistor (HEMT). It is especially designed for use in wideband and high efficiency high power radio frequency (RF) amplification applications such as cellular infrastructure, military and aerospace systems, as well as wireless broadband and high-speed data communication systems. Features and BenefitsBLF8G27LS-140V,118 is based on a high-performance Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT). It offers a common source configuration with an integrated E-Type gate matched to 50Ω and operates from a supply voltage range of 50V to 140V.The device provides an industry leading output power of up to 100W with a 50V supply voltage, a gain of 18 dB and an efficiency of more than 65%. It also offers excellent linearity performance with a third-order intercept point of greater than +33dBm. With a minimum drain-source standby current of 2.0mA, the device requires very low power consumption.In addition, the device offers a wideband frequency response from 1000 MHz to 6000 MHz with a temperature range of -55 degrees Celsius to +125 degrees Celsius.Application FieldsBLF8G27LS-140V,118 is designed primarily for wideband and high efficiency applications in the radio frequency (RF) and microwave frequency ranges.The device is ideal for use in cellular infrastructure, W-CDMA, LTE and WiMAX base station systems, catenary systems, military and aerospace communication systems, ranging systems and high-data-rate communication systems. The device can also be used in point-to-point and point-to-multipoint radio links, satellite phone and satellite earth stations, and wideband video radio and radio broadcast systems.Working PrincipleBLF8G27LS-140V,118 is an enhancement-mode gallium nitride (GaN) High Electron Mobility Transistor (HEMT). It is based on a three-terminal field-effect transistor that incorporates an integrated gate amplifier and drain-source resistance (RDS) in a single package.When positive gate bias is applied to the device, a current flows between the source and drain, while the current between the gate and the source is blocked. Thus, the GaN HEMT provides superior performance with higher gain and improved linearity.When the drain-to-source voltage is applied, current starts to flow in the channel. This current causes the gate-to-source voltage to become negative. As the voltage increases, the intensity of the channel increases, and thus, the flow of electrons increases. This increase in current increases the drain-source voltage, and hence, the power output of the device.

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