BLF8G38LS-75VJ Discrete Semiconductor Products

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The BLF8G38LS-75VJ is a Gallium Nitride (GaN) enhancement-mode field effect transistor (FET) and is part of the RF family of transistors. It is manufactured by Sumitomo Electric and is designed for radio frequency (RF) power amplifiers in satellite communications, cellular and Wi-Fi applications. This particular GaN-on-SiC FET has a maximum operating frequency of 8GHz with an adjustable drain bias voltage range of 0-80V.

To understand the working principle of the BLF8G38LS-75VJ, one must first familiarize themselves with enhancement-mode FETs. Enhancement-mode FETs can be seen as a type of transistor with three terminals. These terminals are the Source (S), Gate (G), and Drain (D). As there can be voltage differences between the Gate and Source or important parameters between the Drain and Source, depending on the type of enhancement-mode FET, the Gate can be used to control the current between the Source and Drain.

When a positive voltage is applied to the Gate of the transistor, the current between the Source and Drain increased, known as forward-biased or ON. This current increases exponentially, as the voltage difference between the Gate and Source approaches 0V, known as the Threshold voltage. Conversely, when the voltage difference between the Gate and Source is negative, the current decreases exponentially, known as reverse-biased or OFF. With enhancement-mode Fets, the ability to control the Drain current of the transistor is what is used in place of the traditional base current control by the Gate.

In the case of the BLF8G38LS-75VJ, it has a rated drain current maximum of 78A and a drain to source voltage of 75V. This allows for a wide range of design choices for applications requiring higher power, up to 625W, such as RF amplifiers in satellite communications, cellular and Wi-Fi applications. The maximum drain efficiency is also very high at 80%.Thanks to the GaN-on-SiC material processes and the adjustable drain bias voltage range, this transistor is capable of operation up to 8GHz with a low noise figure of 2dB, allowing for higher data rates and better overall communication performance compared with other available GaN FETS and Bipolar Junction Transistors (BJTs).

In summary, the BLF8G38LS-75VJ GaN-on-SiC enhancement-mode FET has been specifically designed for high-power, high-frequency applications. When compared to other available GaN FETs and BJTs, the BLF8G38LS-75VJ has a higher power handling capability with improved efficiency and noise performance. This leads to a greater bandwidth and increased overall data rates, ensuring better communication and high-performance.

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