BS170-D26Z Discrete Semiconductor Products |
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Allicdata Part #: | BS170-D26ZTR-ND |
Manufacturer Part#: |
BS170-D26Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 500MA TO-92 |
More Detail: | N-Channel 60V 500mA (Ta) 830mW (Ta) Through Hole T... |
DataSheet: | BS170-D26Z Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Base Part Number: | BS170 |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 830mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 40pF @ 10V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5 Ohm @ 200mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 500mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The BS170-D26Z is a normal-mode P-Channel metal oxide semiconductor field effect transistor (MOSFET) manufactured by STMicroelectronics. It is used for a wide array of applications and is an ideal choice for those who are looking for an easy to use, reliable and cost-effective solution.
The BS170-D26Z is designed to switch heavy loads quickly due to its low capacitance, making it suitable for digital switching and even analog applications. Its P-Channel structure allows it to be used to switch both positive and negative polarity. The P-Channel structure also works well with logic gates, providing an easy way to control a circuit\'s state. The device is also optimized for low on-resistance and low gate charge which makes it highly efficient.
The primary benefit of this MOSFET is the capacity to conduct current between its internal terminals. The BS170-D26Z transfers current from its gate to the drain and from the source to the drain depending on voltage applied to the gate-source input. In order for the MOSFET to be activated, the voltage needs to be greater than the threshold voltage and lower than the absolute maximum rating. When the voltage is below the threshold voltage, the MOSFET will be off and will not transfer current.
The BS170-D26Z is also optimized to handle high-power applications, with its maximum drain current (ID) reaching up to 5A and maximum thermal dissipation of 88 Watts. Its breakdown voltage is at 100 volts, so it is suitable for use with mains power.
When using the BS170-D26Z MOSFET, it is important to keep the gate voltage practical. This can be done by using current-limiting resistors to prevent potentially damaging voltage surges. A pull-down resistor can be used to ensure that the MOSFET remains off in the absence of a control signal.
The BS170-D26Z can be used in a variety of applications including motor control, high-frequency switching circuits, audio amplifiers, and power management. It is also often used in automotive applications, due to its efficiency and reliability.
Overall, the BS170-D26Z MOSFET is an excellent choice for a wide variety of applications. Its low capacitance and high power handling make it an ideal choice for power management and switching circuits, while its low on-resistance and gate charge make it a cost-effective and efficient solution for digital and analog applications.
The specific data is subject to PDF, and the above content is for reference
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