BS170RLRPG

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The BS170RLRPG is a type of single, enhancement-mode, N-channel, insulated gate field-effect transistor (IGFET). This transistor belongs to the transistors-FETs, MOSFETs-single category and it is used for applications such as audio power amplifiers, power management, and voltage-controlled oscillators (VCOs).
This transistor is fabricated using a high-performance gallium arsenide (GaAs) material system and features an advanced, self-aligned fabrication process. As such, it is able to provide high performance while still maintaining low power consumption. The BS170RLRPG is available in both single and dual packages, with a breakdown voltage of 9V and a maximum drain current of 16A. It is also designed with a low gate threshold voltage of 2V, making it ideal for applications requiring low power consumption.

The key to the BS170RLRPG’s superior performance lies in its working principle. The transfer of current in an insulated gate field-effect transistor (IGFET) occurs when an electric field is applied over a channel. When the voltage applied between the channel source and the drain causes a current flow, the channel is in the “on” state. The magnitude of the current depends on the strength of the electric field and the width of the channel. When the voltage applied is not sufficient to cause a current flow, the channel is in the “off” state. Because the BS170RLRPG is an enhancement mode IGFET, the transistor remains in the "off" state when no voltage is applied between the source and the drain.

The BS170RLRPG transistor incorporates an advanced etch process to ensure a completely planar surface for the insulation gate. This process results in higher breakdown voltage and superior device robustness. Additionally, the N-channel structure of this device allows it to be able to operate at higher frequencies than other FET devices. This makes it an ideal choice for applications such as RF power amplifiers, voltage-controlled oscillators (VCOs), and switching regulators.

The BS170RLRPG is also designed with a wide range of safety features, such as over-voltage protection, over-temperature protection, and short-circuit protection. Furthermore, the device incorporates an active thermal shutoff protection circuit, which ensures that the device can safely operate in extreme temperature conditions.

Overall, the BS170RLRPG is a reliable, low-power consuming, high-performance insulated gate field-effect transistor (IGFET) for applications such as audio power amplifiers, power management, and voltage-controlled oscillators (VCOs). The device is available in both single and dual packages and features an advanced etch process to ensure superior performance. Additionally, the N-channel structure allows it to operate at higher frequencies and its robustness is further enhanced by the incorporation of various safety features.

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