Allicdata Part #: | BS170RLRP-ND |
Manufacturer Part#: |
BS170RLRP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 500MA TO-92 |
More Detail: | N-Channel 60V 500mA (Ta) 350mW (Ta) Through Hole T... |
DataSheet: | BS170RLRP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 350mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 60pF @ 10V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5 Ohm @ 200mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 500mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Box (TB) |
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The BS170RLRP is a type of single MOSFET, or metal-oxide semiconductor field effect transistor. It is a three-terminal device that demonstrates high-performance integrated circuit and system applications. It is commonly used in a variety of electronics, such as radio frequency amplifiers, automotive designs and radio-controlled circuits.
The BS170RLRP is a N-channel MOSFET, meaning it is formed from a group of N-doped transistors. It is made from a silicon gate oxide and structure that sits on top of a silicon substrate. A metal source and drain contacts are placed on the substrate around the gate oxide, and two layers of silicon oxide form the gates.
The BS170RLRP is a particular type of MOSFET that provides a high-performance level, making them suitable for a range of devices that require higher switching speeds and higher current densities. The devices also have a low on-state resistance (RDS(on)) and relatively low gate drive requirements, making them suitable for a range of circuits, such as inverters, DC-DC converters and switching regulators. They are also commonly used in digital logic circuits, amplifiers, frequency multipliers and in motor control applications.
In operation, the BS170RLRP uses the principles of field effect operation. In this type of transistor, the electric field produced by a voltage applied to the gate controls the drain-source current flow between the source and the drain. When a voltage is applied to the gate, a majority of the electrons start to travel towards the gate and an electron depletion region is created at the source. This electron depletion region forms an electric field that causes the current flow between the two terminals to be controlled depending on the applied voltage.
The BS170RLRP offers a high input impedance and high transconductance and allows for operation at higher frequencies and at higher output currents, making them suitable for a range of applications where high performance is desired. The device also offers fast switching speed and low gate threshold, allowing for higher-frequency applications and tighter control of the output current.
The BS170RLRP is an excellent device for a range of motor control and digital logic applications, where control of the output current and high performance is desired. They are also well-suited for use in RF amplifiers, frequency multipliers and other high-performance electronics.
The specific data is subject to PDF, and the above content is for reference
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