BS170RLRMG

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BS170RLRMG is an enhancement type, small signal and low power N-channel MOSFET transistor with RDS(on) rating of 1 Ohm. It is intended for DC to approximately 200 MHz use for switching and amplitude modulation applications. Special feature of BS170RLRMG transistor that makes it attractive is the built-in strain relief in the package; convenience of small size and lower dissipation.Let us investigate the application field and working principle of BS170RLRMG device.

Application Field

BS170RLRMG transistor has wide range of applications in digital and analogcircuit designs. This device is mainly suitable for low voltage, low power and low frequency circuits. Some of the areas of application which directly employs BS170RLRMG are :

• High speed logic circuits
• Buffers
• Driver circuits
• Switch circuits
• Amplifiers
• Switching regulators
• Motor control circuits
• Computer Peripherals

Working Principle

BS170RLRMG is an enhancement type field effect transistor. It is a three terminal device which can be used as an electronically operated switch or amplifier. It modulates the current using an electrostatic field. The primary distinction between FET and BJT is, FET use electrostatic fields to control results of the operating device, while BJT uses thermionic fields.

The four FET terminals are labelled as Gate (G) , Source (S) and Drain (D). Workings of BS170RLRMG in simplified form : A current consisting of holes and electrons is free to flow from source to drain. The process of flow of current (also called channel) is controlled by the Gate-Source voltage (Vgs). When the Vgs is at zero volts (ground) no electrons will flow through the channel and the FET is "off", this is the Cut-off region of operations. Unlike BJT’s, FET does not require a minimum base current for biasing; hence it is sometimes considered as Current Controlled Device. When the Gate-Source Voltage (Vgs) is more than cut-off voltage (gate threshold voltage, VGS(th)) then the channel will be opened and current will start to flow, making the FET turn on. When the Gate-Source voltage is varied between cut-off voltage (VGS(th)) and the pinch-off voltage (VP), then a linear resistive channel is formed, called the linear ohmic or triode region.

BS170RLRMG incorporates the strain-relief process which helps in reducing the effect of parasitic elements such as junction capacitance and lead inductance thus making the device more controllable.

Conclusion

BS170RLRMG is an exceptional transistor due to its enjoyable features like low RDS(on) rating, small size and strain relief process. It can be used in switching and amplifier applications. Its application field includes high speed logic circuits, buffers, driver circuits, motor control circuits and much more.In general, BS170RLRMG is a standout performer when resolution and simplicity are the concerns. It produces exemplary results with minimum design complexity.

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