BS170RL1G Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BS170RL1G is a P channel MOSFET device used for operation in electronics. It is a single channel FET (Field Effect Transistor). This device is mainly used for the design of voltage regulators, high speed switches, and motor control applications. MOSFET devices are extensively used for power devices and for high frequency switching applications.

MOSFET devices consist of a MOS (Metal Oxide Semiconductor) field effect transistor. The gate of the device is formed from a Group V material, such as Polysilicon. The channel is formed from a Group IV material, such as silicon. The substrate is typically a dielectric material. The drain and the source of the device are typically conductive materials. The gate is connected to the source and the drain via the contacts. The drain of the device is typically connected to the power supply and the source is typically connected to the load.

BS170RL1G is a P-channel MOSFET. The drain current flows through the drain drain junction in the opposite direction of the source current. In order to operate the device effectively, the gate must be biased with a positive gate voltage. The gate-to-source voltage is typically applied to turn the device “on”, this gate voltage is typically referred to as the threshold voltage. When the gate voltage is less than the threshold voltage, the device is said to be “off” and does not conduct current. When the gate voltage is greater than the threshold voltage, the device is said to be “on” and will conduct current. The current carrying capacity of the device is related to the gate to source voltage, the drain current and the temperature of the device.

The primary application field of the BS170RL1G is power applications. It is an ideal choice for applications such as motor control, voltage regulators, and high speed switches. The device is typically used for PWM (Pulse-Width Modulation) applications. It can also be used for other applications such as battery charging, over-voltage protection, and ac-to-dc power converters. The typical operating temperature range of the device is -55℃ to 175℃.

The working principle of the BS170RL1G is based on the MOSFET device structure. The source and the drain of the device are connected to the power supply through a semiconductor material. A voltage is applied to the gate, which creates a channel between the source and the drain. This channel allows current to flow between the source and the drain when there is a voltage applied between the source and the drain. The resistance of the channel is determined by the gate voltage. The resistance of the channel is directly proportional to the gate voltage. The wider the channel, the lower the resistance of the channel and the higher the drain current.

In summary, the BS170RL1G is a P-channel MOSFET device used for power switches, motor control, and voltage regulator applications. The device works based on the principle of allowing current to flow between the source and the drain when there is a voltage applied between the source and drain. The resistance of the channel is determined by the applied gate voltage and the source to drain voltage. The device has a wide range of operating temperature from -55℃ to 175℃.

The specific data is subject to PDF, and the above content is for reference