Allicdata Part #: | BS170_L34Z-ND |
Manufacturer Part#: |
BS170_L34Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 500MA TO-92 |
More Detail: | N-Channel 60V 500mA (Ta) 830mW (Ta) Through Hole T... |
DataSheet: | BS170_L34Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Base Part Number: | BS170 |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 830mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 40pF @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5 Ohm @ 200mA, 10V |
Current - Continuous Drain (Id) @ 25°C: | 500mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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BS170 MOSFET (also known as Logic Level enhancement MOSFET) is a metal oxide semiconductor field-effect transistor field effect transistor (MOSFET). It is an N-channel device and is frequently used in switching applications. It features a slightly higher voltage rating than other N-channel MOSFET, making it suitable for use in mobile electronic and digital applications.
The BS170 L34Z is a high-performance enhancement MOSFET which offers exceptional switching performance in a very small package. It is manufactured by Fairchild Semiconductor, and is available in a variety of packages including TO-252 and SOT-23. The TO-252 package has a length of 5.93mm, a width of 5.15mm, and a height of 1.2mm. It also features a maximum junction temperature of 105°C.
The BS170 L34Z is a highly versatile device, and has a wide range of applications in both consumer electronics and industrial applications. It is commonly used as a power switch in consumer electronics applications such as DVD players, TVs and gaming consoles. It is also commonly used in industrial applications such as motor control, lighting control and power supply switching.
The working principle of the BS170 L34Z is based on a number of key concepts, namely current amplification, voltage threshold, body factor and gate control. Current amplification is a fundamental principle of MOSFETs, where the current flowing through the device is proportional to the voltage applied to the gate. This means that the BS170 L34Z can be used to switch high voltages with low current. The voltage threshold is the minimum gate voltage required to turn the device on, and is dependent on the device being used. For example, the BS170 L34Z has a 2.8V voltage threshold. The body factor is the prperty that allows the transfer of electrical charge between the gate and drain of the device, and is an important factor when designing the circuit. Finally, gate control is the property of the device which enables it to be switched on and off by the application of a control voltage, allowing the circuit to be easily and conveniently switched on and off.
Overall, the BS170 L34Z is a robust, reliable and high-performance MOSFET which can be used in a wide range of applications. Its small size and voltage rating makes it suitable for mobile electronic and digital implementations, while its current amplification, voltage threshold, body factor and gate control properties make it an ideal choice for both consumer electronics and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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