BS170 Allicdata Electronics
Allicdata Part #:

BS170-ND

Manufacturer Part#:

BS170

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 500MA TO-92
More Detail: N-Channel 60V 500mA (Ta) 830mW (Ta) Through Hole T...
DataSheet: BS170 datasheetBS170 Datasheet/PDF
Quantity: 19671
Stock 19671Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 1mA
Base Part Number: BS170
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 830mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk 
Description

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The BS170 is a small-signal, low-power, enhancement-modefield-effect transistor (FET) with a 0.6 watt power dissipation. It was developed by Motorola in 1975 as a large signal, high-power replacement transistors, such as the 2N3819 and 3N211. It is one of the most popular small-signal FETs, and is widely-used in switching, amplification, and low-level signal applications.

The BS170 is a single-gate device consisting of one N–channel, enhancement-mode, field-effect transistor. It is constructed with a lightly-doped drain and source in an isolated region of an N-type silicon substrate. In the off-state, a negative gate-source voltage produces an inverted depletion region. As the gate voltage is increased to the threshold voltage, an inverted channel is formed between the drain and source, allowing current to flow. The resulting current flow is proportional to gate voltage and, consequently, the BS170 may be used for amplification as well as switching applications.

The BS170 may be used in switching applications, where the FET is used to control a load by turning it either on or off. Such switching applications include voltage and current control, power switching, motor control, and switching power supplies. In amplication applications, the BS170 may be used as an analog amplifier, or in digital circuits as a logic switch.

In addition to its many applications, the BS170 has several advantages over other FETs. It has a relatively low threshold voltage and a relatively low on-resistance, which makes it ideal for low-voltage applications. It also has a high input impedance, which makes it ideal for use in high-impedance circuits. Finally, it has an extremely low input capacitance, which makes it suitable for high-frequency applications.

The BS170 can be used in a variety of circuits. In analog applications, it is commonly used as an amplifier or as a low-noise switch in active low-pass filter circuits. In digital circuits, it can be used as a logic switch or as an amplifier in current mirror circuits. In switching applications, it can be used to switch high-voltage or high-current loads.

In conclusion, the BS170 is a versatile and reliable FET that can be used for both analog and digital applications. It is an ideal choice for low-voltage and low-power applications, as well as high-frequency and high-impedance circuits. Its wide range of uses and advantages make the BS170 a popular choice for engineers and designers.

The specific data is subject to PDF, and the above content is for reference

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