Allicdata Part #: | BS170_J35Z-ND |
Manufacturer Part#: |
BS170_J35Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 500MA TO-92 |
More Detail: | N-Channel 60V 500mA (Ta) 830mW (Ta) Through Hole T... |
DataSheet: | BS170_J35Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Base Part Number: | BS170 |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 830mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 40pF @ 10V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5 Ohm @ 200mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 500mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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The BS170_J35Z is a type of Field Effect Transistor, commonly referred to as a FET. It is a low voltage FET that has higher transconductance than BJTs or BJTs. It is also often used in audio applications because of its low input capacitance, low gate-source output capacitance, and low noise characteristics. It is available in the TO-92 package.
A FET is a three-terminal device that uses an electrical field to modulate the current between two terminals. This modulation is done through the gate terminal, which holds a small voltage, creating an electric field between the gate and the source. This electric field increases or decreases current between the source and the drain based on the gate voltage. FETs are defined by their characteristics; speed, transconductance, input impedance, and other factors. The BS170_J35Z is usually used to construct amplifiers and has gained popularity in instrumentation, audio, and radio frequency applications because of its ability to amplify both signals and power.
The working principle of a FET is surprisingly simple. When a voltage is applied to the gate terminal, it creates an electric field between the source and the drain. This electric field modulates the current between the source and the drain terminals based on the voltage applied. For example, if a negative voltage is applied, the current flow between the source and the drain is blocked. This is known as the OFF state; the FET does not allow current to flow between the source and the drain. The output impedance of the FET is always high in the OFF state.
When a positive voltage is applied, current is allowed to flow from the source to the drain. This is known as the ON state; the FET will allow current to flow between the source and the drain. The output impedance of the FET is much lower in the ON state. The amount of current that can flow through the FET depends on the voltage applied to the gate, higher voltages causing larger currents. The BS170_J35Z, when in the ON state, is capable of providing high amplification with low noise.
The BS170_J35Z is used in a variety of applications because of its low cost, low input capacitance, low gate-source output capacitance, and high transconductance. It is used in power amplifiers and drivers, analog instrumentation, audio amplifier circuits, RF signal amplifiers, and many other applications. Furthermore, it is commonly utilized in signal conditioning, signal switching, voltage regulating, and power MOSFET drivers.
In summary, the BS170_J35Z is a field effect transistor that is capable of high amplification and low noise. It is used in a variety of applications, from audio amplifiers and drivers to instrumentation and RF signal amplifiers. It works by modulating the current flow between the source and the drain based on the voltage applied to the gate terminal. It is inexpensive, possesses good characteristics, and is used in many different applications.
The specific data is subject to PDF, and the above content is for reference
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