BS170RLRA Allicdata Electronics

BS170RLRA Discrete Semiconductor Products

Allicdata Part #:

BS170RLRAOSTR-ND

Manufacturer Part#:

BS170RLRA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 500MA TO-92
More Detail: N-Channel 60V 500mA (Ta) 350mW (Ta) Through Hole T...
DataSheet: BS170RLRA datasheetBS170RLRA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 1mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 350mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The BS170RLRA is a 150V P-Channel Enhancement-Mode MOSFET with a maximum current rating of 4A. It has an RDS on of 1.12Ω, is RoHS-compliant and provides an excellent gate charge x RDS(on) product. So, what is the BS170 RLRA application field and working principle?

What is the BS170 RLRA?

The BS170 transistors are commonly used in many applications, such as switching, amplifier circuits and more. It is a metal oxide semiconductor field-effect transistor (MOSFET) that is based on an enhancement-mode conduction mechanism. In comparison to the even more popular N-Channel MOSFET, the P-Channel type is able to operate from a negative supply at the source or drain. This adds the capability of the transistor to switch negative voltage, either for power control or data signals.

BS170 RLRA Application Field

One of the most common applications for the BS170RLRA is power electronics. Thanks to its robustness and efficiency, the BS170 is an excellent choice for switching heavy loads, like motor control and voltage regulation. Additionally, the BS170 is popular among many hobbyist projects and industrial applications. Other application fields include the use of the BS170 as logic level shifter, UART, etc. It can also be used to switch high current bipolar transistors.

BS170 RLRA Working Principle

The working principle of the BS170RLRA is quite simple to understand. It uses a voltage-controlled current segment barrier between the two electrodes of Drain and Source, which are separated by a thin layer of insulating material. When the potential difference between the electrodes is exceeded, currents start flowing through the channel, which is created by an electric field in the insulator. By controlling the voltage applied to the Channel, we are able to control the current which flows from Source to Drain.

The BS170 is an enhancement-mode device, meaning that it has a low on-state resistance (RDS(on)) without any external gate bias. This implies that the device is normally OFF and requires a gate voltage exceeding the threshold voltage to switch ON. This characteristic is used to protect circuits from unintentional activation, which is possible in normally-on devices.

Conclusion

In summary, the BS170RLRA is an efficient P-Channel MOSFET which is used in a wide variety of applications. It has an excellent gate charge x RDS(on) product and is suitable for switching heavy loads. The working principle is based on a voltage-controlled current segment barrier between the two electrodes of Drain and Source, allowing users to control the current which flows through the insulating channel.

The specific data is subject to PDF, and the above content is for reference

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