BSC072N03LDGATMA1 Allicdata Electronics

BSC072N03LDGATMA1 Discrete Semiconductor Products

Allicdata Part #:

BSC072N03LDGATMA1TR-ND

Manufacturer Part#:

BSC072N03LDGATMA1

Price: $ 0.42
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET 2N-CH 30V 11.5A 8TDSON
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 11.5A 57W Surf...
DataSheet: BSC072N03LDGATMA1 datasheetBSC072N03LDGATMA1 Datasheet/PDF
Quantity: 1000
5000 +: $ 0.38341
Stock 1000Can Ship Immediately
$ 0.42
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Base Part Number: BSC072N03
Supplier Device Package: PG-TDSON-8 Dual
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 57W
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The BSC072N03LDGATMA1 device is a type of array of transistors and field effect transistors (FETs) that is designed for use in a variety of different applications. It is a highly integrated, ultra-low power device that integrates both transistors and FETs into one device. The integrated components make the device highly efficient and effective for use in many different applications.The BSC072N03LDGATMA1 array of transistors and FETs contains both p-type and n-type transistors. These transistors and FETs are used together to create logic gates. All of these gate arrays are then combined to form a complete logic array. This array of transistors and FETs is then used to control functions such as logic control, memory control, power management and control, data control and other similar functions.The BSC072N03LDGATMA1 also includes a variety of integrated circuits and additional functions. These circuits and functions include power control, voltage control, I/O control and much more. In addition to these functions, the device also includes other features such as operating voltages from 0.65V to 5.5V and temperatures from –20°C up to 100°C.The BSC072N03LDGATMA1’s working principle is to combine transistors and FETs to create an array of logic gates. This array of logic gates is then used to control certain functions such as memory control, power management and control, and control of peripheral devices. The array is also used to generate both output signals and input data.The primary application field of the BSC072N03LDGATMA1 is in the consumer electronics market. This device is designed to be used in consumer electronic devices such as televisions, DVD players, video game systems, and more. It can also be used in industrial and consumer electronics applications such as communication systems, DC and AC controllers, automotive applications, processor units, and much more.In addition to consumer electronics applications, the BSC072N03LDGATMA1 array of transistors and FETs is also used in medical applications such as medical imaging systems and medical robots. The device is also used in space applications such as satellite communication systems, satellites, and rockets. The BSC072N03LDGATMA1 array of transistors and FETs is also used in automotive applications such as automotive controllers, engine control units, and other ECU controls. It is also used in military applications including missile guidance systems and RF communication systems.The BSC072N03LDGATMA1 array of transistors and FETs offers many advantages over traditional transistors and FETs. These advantages include low power consumption, smaller size, and improved integration. In addition, the device provides improved performance and better overall system efficiency.The BSC072N03LDGATMA1 device is a highly integrated, low power device that integrates both transistors and FETs into one device. The device is used for a variety of applications, including consumer electronics, medical, automotive, space and military applications. The device is designed to be highly efficient, reliable and highly integrated. The working principle of the device is to integrate transistors and FETs into an array of logic gates that can be used to control peripheral devices and other functions. The device offers many advantages over traditional transistors and FETs and is a popular choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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