BSC059N03ST

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BSC059N03ST Application Field and Working Principle

BSC059N03ST is a enhancement-mode N-channel power field effect transistor (FET) developed by Infineon Technologies. It is in a TO-220AB type SMD plastic package and its Pb-free terminal plating. It has a low on-state resistance and fast switching speed, making it ideal for audible frequency amplifiers, motor control, and power management.

Application Field

BSC059N03ST is typically used to control power signals in audio, motor control, and power supply management applications. It is especially suitable for use in auto-motive, white goods ,and industrial applications.

The device has low on-state resistance and its low gate charge means it can achieve faster switching speeds. This makes it ideal for power amplifiers and power stages, audio frequency amplifiers, electric motor drives, and high frequency power supply management applications. Fast response times and low on-resistance ensure greater efficiency and power savings.

The BSC059N03ST can handle up to 40A at a maximum voltage of 150V and a maximum current of 27A.It has a drain-source breakdown voltage of 150V and a minimum gate-source threshold voltage of 2.1V. It is suitable at temperatures ranging from -55°C to + 175°C.

Working Principle

BSC059N03ST is an enhancement-mode N-channel power field effect transistor. It has a low on-state resistance and fast switching speed, which makes it able to handle more current with less losses. The device is normally in an “off” state and requires a small amount of current to turn “on”. This current is provided by the gate terminal.

When the gate voltage increases, the resistance of the channel decreases and the current flows from the drain to the source. In this “on” state, N-channel MOSFETs are able to pass higher current levels than P-channel MOSFETs due to the larger surface area. The device is able to switch off quickly when the gate voltage is removed, thus providing fast switching speeds.

The device also has a low gate charge, resulting in faster switching. This lower switching speed reduces losses and increases efficiency. The device has a maximum drain-source breakdown voltage of 150V and a minimum gate-source threshold voltage of 2.1V, making it suitable for a wide range of applications.

The BSC059N03ST is a reliable, high-performance device ideal for use in audio, motor control, and power supply management applications. Its low on-state resistance and fast switching speed make it ideal for amplifiers and power stages, electric motor drives, and high frequency power supply management applications. Furthermore, its Pb-free terminal plating allows it to be used in a variety of temperatures and environments.

The specific data is subject to PDF, and the above content is for reference