BSC014NE2LSIATMA1 Allicdata Electronics
Allicdata Part #:

BSC014NE2LSIATMA1TR-ND

Manufacturer Part#:

BSC014NE2LSIATMA1

Price: $ 0.43
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 25V 33A TDSON-8
More Detail: N-Channel 25V 33A (Ta), 100A (Tc) 2.5W (Ta), 74W (...
DataSheet: BSC014NE2LSIATMA1 datasheetBSC014NE2LSIATMA1 Datasheet/PDF
Quantity: 1000
5000 +: $ 0.39748
Stock 1000Can Ship Immediately
$ 0.43
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TDSON-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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BSC014NE2LSIATMA1 is a single field effect transistor (FET) developed by Panasonic. It is a type of metal-oxide-semiconductor FET (MOSFET) that is used in various applications and circuits. The transistor consists of a drain, gate, and source connected by a dielectric material that isolates the source and gate. The main feature of this FET is its low operating threshold voltage, which enables it to operate at lower voltages than other MOSFET transistors.

The BSC014NE2LSIATMA1 is typically used in analog and power circuits, as it has a high input impedance, low noise, low power consumption, and low distortion level. In these circuits, it can be used as a variable resistor, or as an amplifier or even as an oscillator. It can also be used in switching circuits, due to its low operating threshold voltage, which means it is easier to turn it on and off quickly.

The working principle of the BSC014NE2LSIATMA1 is based on the application of voltage, which is applied between the gate and the source. When the gate voltage is applied, the transistor is turned on and allows current to flow between the drain and the source. When the gate voltage is removed, the transistor is turned off and the current stops flowing.

When the source and the gate are connected, the source can be said to be in a forward-biased region and the gate is said to be in a reverse-biased region. When the gate is applied a positive voltage, electrons are attracted towards the gate and thus turn the transistor on. Similarly, when a negative voltage is applied to the gate, the electrons are drawn away from the gate and the transistor turns off.

The BSC014NE2LSIATMA1 transistor can be used in many different applications due to its versatile design and low operating threshold voltage. It can be used in switching circuits, oscillators, amplifiers, and even as a variable resistor. It is also very reliable, as it has a long operating life and low voltage noise. It is a great choice for any circuit design where low power consumption and low distortion levels are required.

The specific data is subject to PDF, and the above content is for reference

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