BSC036NE7NS3GATMA1 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BSC036NE7NS3GATMA1 is a MOSFET (metal oxide semiconductor field-effect transistor) that can be used for a variety of applications. It is a single-ended device, which means it has a single source, gate, and drain connection. Combining the small size and low on-resistance of MOSFETs with high efficiency, BSC036NE7NS3GATMA1 offers an excellent choice for a variety of circuit design problems.This MOSFET is designed for power applications, in particular, for load and line switching. The device features low RDS(on) of 3mΩ, and can operate efficiently over a wide range of temperatures and voltages with a maximum drain-source voltage of 40 V. With its special logic level gate design, this device enables the MOSFET to be directly driven by 5 V logic signals without the need for additional components. The gate threshold voltage of this device is 1.2 V, and it is capable of rapidly switching both high and low currents, making it suitable for high speed switching applications.In addition to its power handling capabilities, BSC036NE7NS3GATMA1 also has a low gate charge. This refers to the amount of charge that must be transferred to the gate in order to turn the transistor on; a lower charge means less power is required for switching. Furthermore, the chip features an ultra-low gate resistance, making it usable in high-frequency applications where you need fast switching times and lower electromagnetic interference.The working principle of this MOSFET is simple. When a voltage is applied to the gate, it creates an electric field that modulates the conductivity of the channel between the source and drain. This allows the current to flow through the device, either turning it on or off depending on the voltage applied.In conclusion, BSC036NE7NS3GATMA1 is a powerful and efficient device for use in a wide range of applications. It is well suited for power switching applications due to its low RDS(on) and logic level gate operation. This MOSFET provides low gate charge and ultra-low gate resistance, making it suitable for high frequency applications. The device works on the principle of electric field modulation, allowing it to be used to control the flow of current.

The specific data is subject to PDF, and the above content is for reference