BSC016N06NSTATMA1 Allicdata Electronics

BSC016N06NSTATMA1 Discrete Semiconductor Products

Allicdata Part #:

BSC016N06NSTATMA1TR-ND

Manufacturer Part#:

BSC016N06NSTATMA1

Price: $ 1.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: DIFFERENTIATED MOSFETS
More Detail: N-Channel 60V 31A (Ta), 100A (Tc) 3W (Ta), 167W (T...
DataSheet: BSC016N06NSTATMA1 datasheetBSC016N06NSTATMA1 Datasheet/PDF
Quantity: 1000
5000 +: $ 0.97512
Stock 1000Can Ship Immediately
$ 1.08
Specifications
Series: OptiMOS™
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 30V
FET Feature: --
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8 FL
Package / Case: 8-PowerTDFN
Description

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The BSC016N06NSTATMA1 is an enhancement-type N-channel MOSFET designed specifically for high speed switching applications. It has an excellent switching performance, with a high switching voltage of 400V and a current rating of -8A@25°C. It is suitable for applications such as motor control, switching power supplies, and DC/DC converters.

The BSC016N06NSTATMA1 is a single N-channel MOSFET, which means it is made up of two N-type regions, one p-type region, and two isolation regions. The two N-type regions are connected to source and drain terminals and the p-type region is connected to the gate terminal. The two isolation regions are between the source, drain and gate terminals, creating an electric barrier to prevent the leakage current away from the source, drain and gate terminals.

The main working principle of the BSC016N06NSTATMA1 is based on the capacitive coupling between the gate and the drain region. When a voltage is applied to the gate terminal, it creates an electric field that induces an electric charge at the channel. When a certain threshold voltage is reached, the charge will create an inversion channel from the drain to the source region, effectively changing the resistance between them. The size of this channel is controlled by the gate voltage, allowing the current flow to be adjusted accordingly. This is how the MOSFET is able to control the voltage and current flowing through it.

The BSC016N06NSTATMA1 is best suited for use in high-speed switching applications, such as motor control and DC/DC converters. Its low on-resistance and high switching speed makes it an ideal choice for these applications, as it can respond quickly to signals and accurately control the power. Additionally, its wide voltage and current ratings make it suitable for a variety of applications.

The BSC016N06NSTATMA1 is an excellent choice for applications that require fast switching and accurate power control. Its high performance and wide range of applications make it a suitable choice for any type of high speed switching application.

The specific data is subject to PDF, and the above content is for reference

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