BSC084P03NS3GATMA1 Allicdata Electronics
Allicdata Part #:

BSC084P03NS3GATMA1TR-ND

Manufacturer Part#:

BSC084P03NS3GATMA1

Price: $ 0.34
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 30V 14.9A TDSON-8
More Detail: P-Channel 30V 14.9A (Ta), 78.6A (Tc) 2.5W (Ta), 69...
DataSheet: BSC084P03NS3GATMA1 datasheetBSC084P03NS3GATMA1 Datasheet/PDF
Quantity: 5000
5000 +: $ 0.31075
Stock 5000Can Ship Immediately
$ 0.34
Specifications
Vgs(th) (Max) @ Id: 3.1V @ 105µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TDSON-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4785pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 78.6A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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BSC084P03NS3GATMA1 is an advanced single enhancement mode N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by the semiconductor company STMicroelectronics. It is used as an electrical switch for controlling and regulating the flow of electrical current in various electronics systems. The device has a low threshold voltage, making it suitable for low power applications.

BSC084P03NS3GATMA1 can be used in a wide variety of applications, including motor control, powering of devices, and signal conditioners in digital and analog circuits. The device can also be used in frequency inverters, solar power inverters, and battery chargers. The device works by using a gate terminal to control the flow of electrons between its source and drain terminals.

Working principle of BSC084P03NS3GATMA1 is based on the principles of field effect transistor (FET) action. In its simplest form, a FET is a three-terminal electronic device in which one terminal is the gate, the second terminal is the source, and the third terminal is the drain. The gate terminal is used to control the flow of electrons from the source to the drain terminals, thus controlling the output of the device. When a voltage signal is applied to the gate terminal, the mobile electrons in the channel are either allowed to flow or are blocked from flowing, depending on the polarity of the signal.

BSC084P03NS3GATMA1 is a high voltage MOSFET with a wide range of applications. The device is rated for a maximum drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 8A. The device has a drain-source on-resistance (RDS(on)) of 0.12 Ω and a gate threshold voltage (VGSth) of 0.85V. This makes it suitable for low voltage operations, allowing the device to switch signals with a voltage as low as 3.3V.

The device also features a fast-switching time to reduce power consumption and enable high-speed operations. The maximum current it can support is 8A, making it suitable for applications requiring high output current. Furthermore, the device has a low drain-source capacitance to ensure the device does not degrade in performance due to the harsh effects of EMI and ESD. The device features a high transconductance amplifier and a low input capacitance.

BSC084P03NS3GATMA1 is an excellent choice for high current applications, such as motor control, inverters and frequency converters. Its wide range of applications and fast-switching characteristics make it ideal for use in a variety of applications, ranging from consumer electronics to industrial applications.

The specific data is subject to PDF, and the above content is for reference

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