BSC026N08NS5ATMA1 Allicdata Electronics
Allicdata Part #:

BSC026N08NS5ATMA1TR-ND

Manufacturer Part#:

BSC026N08NS5ATMA1

Price: $ 1.35
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 80V 23A 8TDSON
More Detail: N-Channel 80V 23A (Ta), 100A (Tc) 2.5W (Ta), 156W ...
DataSheet: BSC026N08NS5ATMA1 datasheetBSC026N08NS5ATMA1 Datasheet/PDF
Quantity: 1000
1 +: $ 1.35000
10 +: $ 1.29000
100 +: $ 1.17000
1000 +: $ 0.93000
10000 +: $ 0.45000
Stock 1000Can Ship Immediately
$ 1.35
Specifications
Vgs(th) (Max) @ Id: 3.8V @ 115µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TDSON-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Transistors, in general, are electronic components used in many applications where an electronic signal needs to be switched between two states. A Field-Effect Transistor (FET) is one of the most common transistors used, which is a three-terminal device whose electrical characteristics relies on a small electric field. Metal–Oxide–Semiconductor Field-effect transistor (MOSFET) is a specific type of FET, which has a metal gate electrode sitting on the insulation of a semiconductor material. An example of a MOSFET is the BSC026N08NS5ATMA1.

The BSC026N08NS5ATMA1 is typically applied in power supplies, lighting control and home appliances. It can control signals from low to high voltage and from low to high current. It can also be used for power switching applications, such as high voltage power MOSFETs for Uninterruptable Power Supply (UPSs) and for dedicated power electronics.

The working principle of the BSC026N08NS5ATMA1 is based on its construction: the MOSFET has three terminals, which are called gate, drain and source. The gate terminal connects to a control current, which will apply a voltage to the gate input. This voltage causes an electric field to form in the channel between the source and drain, which will affect the current flow from the source to the drain, thereby controlling the flow of the current. When the gate voltage has a positive voltage, the current flows from source to drain, and when the gate voltage has a negative voltage, the current stops flowing.

The BSC026N08NS5ATMA1 is an innovative and efficient MOSFET which can be used in many applications as good replacement for bipolar transistors. Its ability to control current and voltage are superior compared to other types of transistors, while its low on-resistance, due to its higher voltage capabilities and fast switching speeds, makes it one of the most reliable transistors on the market. Furthermore, this transistor is designed to have superior thermal characteristics, which makes it suitable for many high-power applications.

The BSC026N08NS5ATMA1 is a versatile and efficient MOSFET which allows its users to control current and voltage with a high degree of precision. Its low on-resistance and superior thermal characteristics make it suitable for various high-power applications, while its fast switching speeds and wide range of voltages make it an ideal choice for many power supplies, lighting control and home appliance designs.

The specific data is subject to PDF, and the above content is for reference

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