| Allicdata Part #: | BSC0500NSIATMA1-ND |
| Manufacturer Part#: |
BSC0500NSIATMA1 |
| Price: | $ 0.62 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 30V 35A TDSON-8 |
| More Detail: | N-Channel 30V 35A (Ta), 100A (Tc) 2.5W (Ta), 69W (... |
| DataSheet: |  BSC0500NSIATMA1 Datasheet/PDF |
| Quantity: | 1000 |
| 5000 +: | $ 0.55456 |
Specifications
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | PG-TDSON-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 69W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3300pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 10V |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 1.3 mOhm @ 30A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 35A (Ta), 100A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BSC0500NSIATMA1 is an enhancement-mode N-channel MOSFET transistor. It is mainly used in power switching applications such as gate drivers, power inverters, and power converters. This component is featured with a maximum drain current of 2A, a maximum drain-source voltage of 35V, and a junction temperature range from -55
The specific data is subject to PDF, and the above content is for reference
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