Allicdata Part #: | BSC0910NDIATMA1-ND |
Manufacturer Part#: |
BSC0910NDIATMA1 |
Price: | $ 0.71 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 25V 16A/31A TISON8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 1... |
DataSheet: | BSC0910NDIATMA1 Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.64168 |
Series: | OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Asymmetrical |
FET Feature: | Logic Level Gate, 4.5V Drive |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 11A, 31A |
Rds On (Max) @ Id, Vgs: | 4.6 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 6.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 4500pF @ 12V |
Power - Max: | 1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PG-TISON-8 |
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BSC0910NDIATMA1 is an array of four N-channel, depletion-mode Field Effect Transistors (FETs) built in the same compact package. It is specifically designed for operation in applications that do not require a very high performance when compared to enhanced products. The diversity of the elements in this component enables to design many kinds of devices with a single component, unlike when two or more different components are used.
The most common application that can be designed with BSC0910NDIATMA1 is in switch mode power supplies (SMPS) control and protection. The array has high input impedance and low capacitance and is suitable for use as a switching or control element to switch the power on and off, as well as for protection against any overloads or peak current applications. Furthermore, since it is a low power component and does not introduce large voltage drops, it can be used even in low power designs.
The four FETs in BSC0910NDIATMA1 are connected together in parallel and operate with a low gate voltage. The gate voltage is adjustable and is typically used to provide maximum-on or maximum-off current, to limit the voltage across the FET for improved performance and for automatic shutting off in case of high current application. The current control and the gate voltage can be applied either with an external resistor or an internal current regulating circuit, depending on the application requirements.
The operating principle of each FET within BSC0910NDIATMA1 is almost identical and involves two gate electrodes and two source electrodes. The gate electrodes are connected to the voltage and the source electrodes are connected to the drain. When a voltage is applied to the gate, an electric field is formed, which creates a region of high electric field. The electron current in this region of high electric field is known as the drain current. The drain current is proportional to the applied voltage and therefore can be used to regulate the output power of the device.
The BSC0910NDIATMA1 array is also able to handle high power applications without becoming over heated, due to the presence of temperature-resistant material in the package. Finally, the size and weight of the components in the array make them an ideal choice for applications that require a space-saving enclosure.
In conclusion, the BSC0910NDIATMA1 array is a versatile and reliable device that can be used for a variety of applications. It is low noise, low power and temperature-resistant, and its compact size makes it suitable for a range of applications. It is well suited for use in switch mode power supplies, protection and current regulation, due to its high input impedance, low capacitance and adjustable gate voltage.
The specific data is subject to PDF, and the above content is for reference
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