BSC0910NDIATMA1 Allicdata Electronics
Allicdata Part #:

BSC0910NDIATMA1-ND

Manufacturer Part#:

BSC0910NDIATMA1

Price: $ 0.71
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET 2N-CH 25V 16A/31A TISON8
More Detail: Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 1...
DataSheet: BSC0910NDIATMA1 datasheetBSC0910NDIATMA1 Datasheet/PDF
Quantity: 1000
5000 +: $ 0.64168
Stock 1000Can Ship Immediately
$ 0.71
Specifications
Series: OptiMOS™
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11A, 31A
Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TISON-8
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BSC0910NDIATMA1 is an array of four N-channel, depletion-mode Field Effect Transistors (FETs) built in the same compact package. It is specifically designed for operation in applications that do not require a very high performance when compared to enhanced products. The diversity of the elements in this component enables to design many kinds of devices with a single component, unlike when two or more different components are used.

The most common application that can be designed with BSC0910NDIATMA1 is in switch mode power supplies (SMPS) control and protection. The array has high input impedance and low capacitance and is suitable for use as a switching or control element to switch the power on and off, as well as for protection against any overloads or peak current applications. Furthermore, since it is a low power component and does not introduce large voltage drops, it can be used even in low power designs.

The four FETs in BSC0910NDIATMA1 are connected together in parallel and operate with a low gate voltage. The gate voltage is adjustable and is typically used to provide maximum-on or maximum-off current, to limit the voltage across the FET for improved performance and for automatic shutting off in case of high current application. The current control and the gate voltage can be applied either with an external resistor or an internal current regulating circuit, depending on the application requirements.

The operating principle of each FET within BSC0910NDIATMA1 is almost identical and involves two gate electrodes and two source electrodes. The gate electrodes are connected to the voltage and the source electrodes are connected to the drain. When a voltage is applied to the gate, an electric field is formed, which creates a region of high electric field. The electron current in this region of high electric field is known as the drain current. The drain current is proportional to the applied voltage and therefore can be used to regulate the output power of the device.

The BSC0910NDIATMA1 array is also able to handle high power applications without becoming over heated, due to the presence of temperature-resistant material in the package. Finally, the size and weight of the components in the array make them an ideal choice for applications that require a space-saving enclosure.

In conclusion, the BSC0910NDIATMA1 array is a versatile and reliable device that can be used for a variety of applications. It is low noise, low power and temperature-resistant, and its compact size makes it suitable for a range of applications. It is well suited for use in switch mode power supplies, protection and current regulation, due to its high input impedance, low capacitance and adjustable gate voltage.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "BSC0" Included word is 40
Part Number Manufacturer Price Quantity Description
BSC016N06NSTATMA1 Infineon Tec... 1.08 $ 1000 DIFFERENTIATED MOSFETSN-C...
BSC037N08NS5ATMA1 Infineon Tec... 0.83 $ 1000 MOSFET N-CH 80V 100A 8TDS...
BSC027N06LS5ATMA1 Infineon Tec... 0.71 $ 1000 MOSFET N-CH 60V 100A 8TDS...
BSC036NE7NS3GATMA1 Infineon Tec... -- 1000 MOSFET N-CH 75V 100A TDSO...
BSC059N03ST Infineon Tec... 0.0 $ 1000 MOSFET N-CH 30V 50A TDSON...
BSC020N03LSGATMA1 Infineon Tec... 0.48 $ 10000 MOSFET N-CH 30V 100A TDSO...
BSC054N04NSGATMA1 Infineon Tec... 0.25 $ 10000 MOSFET N-CH 40V 81A TDSON...
BSC040N08NS5ATMA1 Infineon Tec... -- 1000 MOSFET N-CH 80V 100A 8TDS...
BSC046N10NS3GATMA1 Infineon Tec... 1.03 $ 1000 MOSFET N-CH 100V 100A TDS...
BSC014N06NSTATMA1 Infineon Tec... 1.23 $ 1000 DIFFERENTIATED MOSFETSN-C...
BSC052N03LSATMA1 Infineon Tec... 0.26 $ 1000 MOSFET N-CH 30V 17A TDSON...
BSC057N08NS3GATMA1 Infineon Tec... -- 1000 MOSFET N-CH 80V 100A TDSO...
BSC0500NSIATMA1 Infineon Tec... 0.62 $ 1000 MOSFET N-CH 30V 35A TDSON...
BSC0925NDATMA1 Infineon Tec... 0.27 $ 1000 MOSFET 2N-CH 30V 15A TISO...
BSC019N06NSATMA1 Infineon Tec... 0.75 $ 1000 DIFFERENTIATED MOSFETSN-C...
BSC072N08NS5ATMA1 Infineon Tec... 0.51 $ 1000 MOSFET N-CH 80V 74A 8TDSO...
BSC022N03SG Infineon Tec... -- 1000 MOSFET N-CH 30V 100A TDSO...
BSC057N03MSGATMA1 Infineon Tec... 0.22 $ 1000 MOSFET N-CH 30V 71A TDSON...
BSC022N03S Infineon Tec... -- 1000 MOSFET N-CH 30V 50A TDSON...
BSC014NE2LSIATMA1 Infineon Tec... 0.43 $ 1000 MOSFET N-CH 25V 33A TDSON...
BSC035N04LSGATMA1 Infineon Tec... 0.33 $ 5000 MOSFET N-CH 40V 100A TDSO...
BSC014N04LSIATMA1 Infineon Tec... -- 25000 MOSFET N-CH 40V 100A TDSO...
BSC010NE2LSIATMA1 Infineon Tec... -- 30000 MOSFET N-CH 25V 38A TDSON...
BSC026N08NS5ATMA1 Infineon Tec... -- 1000 MOSFET N-CH 80V 23A 8TDSO...
BSC025N03LSGATMA1 Infineon Tec... 0.36 $ 1000 MOSFET N-CH 30V 100A TDSO...
BSC014N04LSTATMA1 Infineon Tec... 0.81 $ 1000 DIFFERENTIATED MOSFETSN-C...
BSC047N08NS3GATMA1 Infineon Tec... 0.9 $ 1000 MOSFET N-CH 80V 100A TDSO...
BSC019N04LSATMA1 Infineon Tec... 0.55 $ 1000 MOSFET N-CH 40V 27A 8TDSO...
BSC084P03NS3GATMA1 Infineon Tec... 0.34 $ 5000 MOSFET P-CH 30V 14.9A TDS...
BSC030N04NSGATMA1 Infineon Tec... 0.32 $ 1000 MOSFET N-CH 40V 100A TDSO...
BSC0921NDIATMA1 Infineon Tec... 0.5 $ 1000 MOSFET 2N-CH 30V 17A/31A ...
BSC0910NDIATMA1 Infineon Tec... 0.71 $ 1000 MOSFET 2N-CH 25V 16A/31A ...
BSC0504NSIATMA1 Infineon Tec... 0.29 $ 1000 MOSFET N-CH 30V 21A TDSON...
BSC032N03SG Infineon Tec... -- 1000 MOSFET N-CH 30V 100A TDSO...
BSC0901NSATMA1 Infineon Tec... -- 1000 MOSFET N-CH 30V 100A 8TDS...
BSC011N03LSIATMA1 Infineon Tec... -- 1000 MOSFET N-CH 30V 37A TDSON...
BSC0902NSATMA1 Infineon Tec... 0.32 $ 5000 MOSFET N-CH 30V 100A 8TDS...
BSC072N03LDGATMA1 Infineon Tec... 0.42 $ 1000 MOSFET 2N-CH 30V 11.5A 8T...
BSC0702LSATMA1 Infineon Tec... -- 1000 MOSFET N-CH 8TDSON
BSC039N06NSATMA1 Infineon Tec... -- 1000 MOSFET N-CH 60V 19A TDSON...
Latest Products
AO4822L_101

MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...

AO4822L_101 Allicdata Electronics
SI5944DU-T1-GE3

MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...

SI5944DU-T1-GE3 Allicdata Electronics
SI4973DY-T1-GE3

MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...

SI4973DY-T1-GE3 Allicdata Electronics
NTMD6601NR2G

MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...

NTMD6601NR2G Allicdata Electronics
BUK7K6R2-40E/CX

MOSFET 2N-CH 56LFPAKMosfet Array

BUK7K6R2-40E/CX Allicdata Electronics
PHN210,118

MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...

PHN210,118 Allicdata Electronics