Allicdata Part #: | BSC014N06NSTATMA1TR-ND |
Manufacturer Part#: |
BSC014N06NSTATMA1 |
Price: | $ 1.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIFFERENTIATED MOSFETS |
More Detail: | N-Channel 60V 100A (Tc) 3W (Ta), 188W (Tc) Surface... |
DataSheet: | BSC014N06NSTATMA1 Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 1.10615 |
Series: | OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 1.45 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 3.3V @ 120µA |
Gate Charge (Qg) (Max) @ Vgs: | 104nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 8125pF @ 30V |
FET Feature: | -- |
Power Dissipation (Max): | 3W (Ta), 188W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TDSON-8 FL |
Package / Case: | 8-PowerTDFN |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Transistors are highly versatile electrical switching and amplification devices that are widely used in today’s electronics. One type of transistor, the Field Effect Transistor (FET), is used in a variety of applications due to its ability to control voltage and current. The BSC014N06NSTATMA1 is a N-channel MOSFET, a type of FET where the voltage determines the current flow, which makes it suitable for applications such as switching, voltage regulation, and pulse shaping.
The BSC014N06NSTATMA1 is a discrete N-channel MOSFET that is designed to be used in a variety of applications. It is made up of an insulated conductive polymer substrate and a special type of gate dielectric, which are both much thinner than standard silicon MOSFET transistors. This allows it to be smaller and more efficient, while still offering many of the same features as standard devices.
The main advantage of the BSC014N06NSTATMA1 is its ability to control voltage and current with minimal power consumption. It has a maximum voltage rating of 20 volts and a maximum current rating of 6 amps. This makes it suitable for use in low-power applications such as switching circuits, voltage regulators, and pulse shaping. It also has a higher breakdown voltage than standard MOSFETs, which makes it more suitable for use in higher power applications.
The working principle of the BSC014N06NSTATMA1 is based on the fact that when a voltage is applied to the gate of the device, the voltage creates an electric field, which in turn creates a current flow from the source to the drain. This current flow can be used to control the voltage and current output of the device, depending on the applied voltage. This enables the device to be used in a variety of applications, such as switching, voltage regulation, and pulse shaping.
In addition to its low power consumption and high breakdown voltage, the BSC014N06NSTATMA1 also offers excellent thermal and electrical performance. It has an operating temperature range of -55°C to 175°C and an operating frequency range of 0.2MHz to 10MHz. This makes it suitable for use in both high and low temperature environments, as well as high speed applications.
The BSC014N06NSTATMA1 is a versatile device that can be used in a variety of applications, from switching to voltage regulation and pulse shaping. Its ability to control voltage and current with minimal power consumption makes it an ideal choice for low-power applications, while its excellent thermal and electrical performance makes it suitable for use in high temperature and high speed applications. This makes the BSC014N06NSTATMA1 a great choice for designers looking for a reliable, efficient transistor for their electronics applications.
The specific data is subject to PDF, and the above content is for reference
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