
Allicdata Part #: | BSC150N03LDGATMA1TR-ND |
Manufacturer Part#: |
BSC150N03LDGATMA1 |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 30V 8A 8TDSON |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 8A 26W Surface... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.29000 |
10 +: | $ 0.28130 |
100 +: | $ 0.27550 |
1000 +: | $ 0.26970 |
10000 +: | $ 0.26100 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Base Part Number: | BSC150N03 |
Supplier Device Package: | PG-TDSON-8 Dual |
Package / Case: | 8-PowerVDFN |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 26W |
Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 13.2nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 20A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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BSC150N03LDGATMA1 is an advanced Insulated Gate Bipolar Transistor (IGBT) array chip with three 3-phase inverter gates and associated circuitry. It has a typical on-state resistance value of 160mΩ at a 25°C junction temperature and is also suitable for use in many power switching applications. As its name suggests, it consists of nine (9) N-channel MOSFETs in a single package, with each MOSFET having three IGBT channels and three associated control elements. This makes it an ideal choice for applications requiring high-power switching and precise motor control.
The BSC150N03LDGATMA1 utilizes the monolithic integration of three IGBT, three associated control elements and a three-phase inverter gate in order to provide a highly efficient, feedback-maintained system with very low on-state losses, even at low temperatures. By combining three IGBTs, the chip is capable of providing a high-amplitude current with very low on-state losses compared to traditional MOSFET circuits. In addition, since the three IGBTs share a single common control element, the system is highly efficient and power-saving.
The BSC150N03LDGATMA1 utilizes a high-speed optical gate to control the gate voltage of all three IGBTs at the same time. This allows each IGBT to be gate-controlled and switching accomplished with very low switching losses. The optical gate uses a reflective mirror to split the light energy into three beams and apply them to the gate of each IGBT. The three beams create a closely coupled, matched IGBT gate current that is optimized for the best possible dynamic performance. This allows for the high-speed switching of the IGBTs at frequencies up to 100kHz, and with very high accuracy.
The BSC150N03LDGATMA1 is a feature-rich array, which makes it suitable for a wide range of applications, such as motor drives, power supplies, home appliances, and renewable energy systems. It has been specifically designed for high-current capacity, fast switching and low on-state losses, making it an excellent choice for many different applications. Additionally, the design of the chip allows it to be used in a cost-effective manner, making it an ideal solution for those looking for a reliable and efficient power control system.
In summary, the BSC150N03LDGATMA1 is an advanced IGBT array chip that provides high-power switching, precise motor control, and very low on-state losses due to its monolithic integration with three IGBTs and three associated control elements. It also features a high-speed optical gate, which allows it to switch frequencies up to 100kHz with very high accuracy. It is an ideal choice for a variety of power switching applications, from motor drives to power supplies, home appliances, and renewable energy systems, due to its affordability, feature set, and efficiency.
The specific data is subject to PDF, and the above content is for reference
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