BSC118N10NSGATMA1 Discrete Semiconductor Products

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The BSC118N10NSGATMA1 is a single N-channel enhancement mode field-effect transistor (FET). It is part of a series of power MOSFETs offered by Infineon Technologies. BSC118N10NSGATMA1 is a vertical double diffused MOSFET, especially designed for high current and low voltage applications like synchronous rectification in switched mode power supplies and motor control and H Bridge applications. Thanks to its small size and low resistance, it is an ideal solution for high efficiency and low noise regulation circuitry.

The BSC118N10NSGATMA1 has a drain current rating of 118 amps and a drain-source voltage of 10V. It has a low gate threshold voltage (2.2V) and a fast switching speed up to 20V/ns. The package is an industry-standard TO-220AB dual-in-line package. The product incorporates Schottky diodes and internal body diodes to provide a fast response to output short-circuits.

BSC118N10NSGATMA1 is suitable for switching regulators, DC-DC converters, motor controllers, and all other power management applications. Its low on-resistance and low gate charge allow it to operate in efficiency-critical applications such as those found in the telecom and server markets. Within telecom and server applications, this FET can be used as a boost switch in voltage controllers, as an output switch, or as an active switch in a power rectifier.

The operating principle of BSC118N10NSGATMA1 is that when the gate voltage is greater than the threshold voltage, the channel is opened and drain-source current will flow. The current flowing through the pinch-off region is limited by the transconductance parameter, which is a function of the gate-drain voltage. The resulting voltage drop across the drain-source junction is known as the pinch-off voltage. The pinch-off voltage must be less than the breakdown voltage to ensure the FET remains in the linear region.

BSC118N10NSGATMA1 offers high breakdown voltage and relatively low gate conductance. The latter allows designers to apply a lower switching voltage to the gate to achieve the same current level as an equivalent bipolar transistor. This reduced voltage requirement enables the use of smaller, lower power FETs. Furthermore, the FET has a higher maximum junction temperature rating than most bipolar transistors, making it well suited for use in high power applications.

In conclusion, BSC118N10NSGATMA1 is a single N-channel MOSFET which offers excellent efficiency and switching capabilities in high current, low voltage applications. It is an ideal solution for high efficiency and low noise regulation circuitry and can be used for switching regulators, DC-DC converters, motor controllers, and all other power management applications. The versatile operating principle of the FET – allowing for current flow between the source and the drain when the gate voltage is above the threshold – combined with low RDS(on) and fast switching speed make it a great choice for designers.

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