
Allicdata Part #: | BSC120N03LSGATMA1TR-ND |
Manufacturer Part#: |
BSC120N03LSGATMA1 |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 39A TDSON-8 |
More Detail: | N-Channel 30V 12A (Ta), 39A (Tc) 2.5W (Ta), 28W (T... |
DataSheet: | ![]() |
Quantity: | 5000 |
5000 +: | $ 0.14857 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PG-TDSON-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 28W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta), 39A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The BSC120N03LSGATMA1 (BSc) is a depletion-mode vertical power MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is a single array transistor which contains an insulated gate and drain regions sandwiching an active region of n-type channel material, which provides an electric current between source and drain. This structure creates a Field Effect Transistor (FET) which can be used for various applications.
This type of FET operates in a slightly different fashion compared to other FETs, it is a constant source transistor - meaning that when the gate-source voltage changes, the resistance between source and gate remains relatively constant, even when the temperature changes. Because of this unique characteristic, the BSC120N03LSGATMA1 is often used in applications which require reliable operation over wide temperature ranges.
The BSC120N03LSGATMA1 has a wide application field, ranging from controlling motor speed and power supplies to being used in transients and delay lines. For example, it can be used to control speed in motor drives, switching the motor voltage on and off in order to adjust the motor speed. The BSC120N03LSGATMA1 can also be used in power supplies and switching mode power converters, where it is used to switch between different power supplies while maintaining a constant voltage and current. In addition, it can be used in transients and delay lines, where its unique characteristics are exploited to create a delay in signal processing.
The working principle of the BSC120N03LSGATMA1 can be summed up as follows: An electric field exists between the source and drain, which is controlled by the voltage applied to the gate. This voltage controls the resistance between the source and drain and therefore the current flow. Changing the voltage at the gate changes the resistance between the source and the drain, thus allowing for greater or lesser current flow. This principle is what makes the BSC120N03LSGATMA1 a switching transistor, allowing it to be used in a wide range of applications.
In conclusion, the BSC120N03LSGATMA1 is a single array depletion-mode vertical power MOSFET. It is a constant source transistor which has a wide range of applications in motor drives, power supplies, transients and delay lines. Its working principle is based on the electric field created between the gate and the source, which is controlled by the voltage at the gate.
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